HE9014 Datasheet, Equivalent, Cross Reference Search
Type Designator: HE9014
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.45 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 270 MHz
Collector Capacitance (Cc): 2.2 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO-92
HE9014 Transistor Equivalent Substitute - Cross-Reference Search
HE9014 Datasheet (PDF)
he9014.pdf
Spec. No. : HE6102HI-SINCERITYIssued Date : 1992.08.25Revised Date : 2005.02.04MICROELECTRONICS CORP.Page No. : 1/5HE9014NPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HE9014 is designed for use in pre-amplifier of low level and low noise.TO-92Features High Total Power Dissipation (PD: 450mW) Complementary to HE9015 High hFE and Good LinearityAbsolute Maxim
he9015.pdf
Spec. No. : HE6101HI-SINCERITYIssued Date : 1992.08.25Revised Date : 2005.02.04MICROELECTRONICS CORP.Page No. : 1/5HE9015PNP EPITAXIAL PLANAR TRANSISTORDescriptionThe HE9015 is designed for use in pre-amplifier of low level and low noise.TO-92Features High Total Power Dissipation (PD: 450mW) Complementary to HE9014 High hFE and Good LinearityAbsolute Maxim
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
