HI669A Datasheet. Specs and Replacement

Type Designator: HI669A  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Base Voltage |Vcb|: 180 V

Maximum Collector-Emitter Voltage |Vce|: 160 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 140 MHz

Collector Capacitance (Cc): 14 pF

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: TO-251

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HI669A datasheet

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HI669A

Spec. No. HE9004 HI-SINCERITY Issued Date 1998.01.25 Revised Date 2006.12.06 MICROELECTRONICS CORP. Page No. 1/4 HI669A NPN EPITAXIAL PLANAR TRANSISTOR Description The HI669A is designed for low frequency power amplifier. TO-251 Absolute Maximum Ratings (T =25 C) A Maximum Temperatures Storage Temperature...................................................... See More ⇒

Detailed specifications: HI10387, HI112, HI117, HI122, HI127, HI13003, HI3669, HI649A, TIP35C, HI772, HI882, HJ10387, HJ112, HJ117, HJ122, HJ127, HJ13003

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