All Transistors. HI669A Datasheet

 

HI669A Datasheet and Replacement


   Type Designator: HI669A
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 180 V
   Maximum Collector-Emitter Voltage |Vce|: 160 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 140 MHz
   Collector Capacitance (Cc): 14 pF
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: TO-251
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HI669A Datasheet (PDF)

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HI669A

Spec. No. : HE9004 HI-SINCERITY Issued Date : 1998.01.25 Revised Date : 2006.12.06 MICROELECTRONICS CORP. Page No. : 1/4 HI669A NPN EPITAXIAL PLANAR TRANSISTOR Description The HI669A is designed for low frequency power amplifier. TO-251 Absolute Maximum Ratings (T =25C) A Maximum Temperatures Storage Temperature...................................................

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: DMC9640N | 2SC378 | BU206DL | AD-BC858-A | BUR61 | BC817 | 2SB881

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