HI772 Datasheet, Equivalent, Cross Reference Search
Type Designator: HI772
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 80 MHz
Collector Capacitance (Cc): 55 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO-251
HI772 Transistor Equivalent Substitute - Cross-Reference Search
HI772 Datasheet (PDF)
hi772.pdf
Spec. No. : HE9015 HI-SINCERITY Issued Date : 1996.04.12 Revised Date : 2006.12.06 MICROELECTRONICS CORP. Page No. : 1/5 HI772 PNP EPITAXIAL PLANAR TRANSISTOR Description The HI772 is designed for using in output stage of 10 W audio amplifier, voltage regulator, TO-251 DC-DC converter and relay driver. Absolute Maximum Ratings (T =25C) A Maximum Temperatures S
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