HI772 Datasheet. Specs and Replacement

Type Designator: HI772  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 10 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 80 MHz

Collector Capacitance (Cc): 55 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: TO-251

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HI772 datasheet

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HI772

Spec. No. HE9015 HI-SINCERITY Issued Date 1996.04.12 Revised Date 2006.12.06 MICROELECTRONICS CORP. Page No. 1/5 HI772 PNP EPITAXIAL PLANAR TRANSISTOR Description The HI772 is designed for using in output stage of 10 W audio amplifier, voltage regulator, TO-251 DC-DC converter and relay driver. Absolute Maximum Ratings (T =25 C) A Maximum Temperatures S... See More ⇒

Detailed specifications: HI112, HI117, HI122, HI127, HI13003, HI3669, HI649A, HI669A, BD135, HI882, HJ10387, HJ112, HJ117, HJ122, HJ127, HJ13003, HJ3669

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