All Transistors. HJ127 Datasheet

 

HJ127 Datasheet and Replacement


   Type Designator: HJ127
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 20 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 300 pF
   Forward Current Transfer Ratio (hFE), MIN: 1000
   Noise Figure, dB: -
   Package: TO-252
 

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HJ127 Datasheet (PDF)

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HJ127

Spec. No. : HE6017HI-SINCERITYIssued Date : 1996.04.12Revised Date : 2005.07.14MICROELECTRONICS CORP.Page No. : 1/4HJ127PNP EPITAXIAL PLANAR TRANSISTORDescription TO-252 High DC current gain Built-in a damper diode at E-C Darlington SchematicCAbsolute Maximum Ratings (TA=25C)B Maximum TemperaturesStorage Temperature ......................................

Datasheet: HI649A , HI669A , HI772 , HI882 , HJ10387 , HJ112 , HJ117 , HJ122 , TIP42 , HJ13003 , HJ3669 , HJ667A , HJ669A , HJ772 , HJ882 , HLB120A , HLB121A .

History: NSBA113EF3T5G | LBC848BDW1T3G | 2SB858C

Keywords - HJ127 transistor datasheet

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