HJ772 Datasheet. Specs and Replacement

Type Designator: HJ772  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 10 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 80 MHz

Collector Capacitance (Cc): 55 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: TO-252

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HJ772 datasheet

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HJ772

Spec. No. HE6015 HI-SINCERITY Issued Date 1996.04.12 Revised Date 2008.06.19 MICROELECTRONICS CORP. Page No. 1/5 HJ772 PNP EPITAXIAL PLANAR TRANSISTOR Description The HJ772 is designed for using in output stage of 10 W audio amplifier, voltage regulator, DC-DC converter and relay driver. TO-252 Absolute Maximum Ratings (TA=25 C) Maximum Temperatures Stor... See More ⇒

Detailed specifications: HJ112, HJ117, HJ122, HJ127, HJ13003, HJ3669, HJ667A, HJ669A, TIP42, HJ882, HLB120A, HLB121A, HLB121D, HLB121I, HLB122I, HLB123D, HLB123I

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