HM965 Datasheet. Specs and Replacement

Type Designator: HM965  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1.2 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 150 MHz

Collector Capacitance (Cc): 50 pF

Forward Current Transfer Ratio (hFE), MIN: 340

Noise Figure, dB: -

Package: SOT-89

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HM965 datasheet

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HM965

Spec. No. HE9511 HI-SINCERITY Issued Date 1996.04.12 Revised Date 2004.12.21 MICROELECTRONICS CORP. Page No. 1/4 HM965 NPN EPITAXIAL PLANAR TRANSISTOR Description The HM965 is designed for use as AF output amplifier and glash unit. SOT-89 Features Low VCE(sat) High performance at low supply voltage Absolute Maximum Ratings Maximum Temperatures Storage Tempera... See More ⇒

Detailed specifications: HM5551, HM669A, HM6718, HM772, HM772A, HM882, HM92, HM94, 431, HMBT1015, HMBT1815, HMBT2222A, HMBT2369, HMBT2907A, HMBT3904, HMBT3906, HMBT4401

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