All Transistors. HM965 Datasheet

 

HM965 Datasheet, Equivalent, Cross Reference Search


   Type Designator: HM965
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1.2 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150 MHz
   Collector Capacitance (Cc): 50 pF
   Forward Current Transfer Ratio (hFE), MIN: 340
   Noise Figure, dB: -
   Package: SOT-89

 HM965 Transistor Equivalent Substitute - Cross-Reference Search

   

HM965 Datasheet (PDF)

 ..1. Size:38K  hsmc
 hm965.pdf

HM965 HM965

Spec. No. : HE9511HI-SINCERITYIssued Date : 1996.04.12Revised Date : 2004.12.21MICROELECTRONICS CORP.Page No. : 1/4HM965NPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HM965 is designed for use as AF output amplifier and glash unit.SOT-89Features Low VCE(sat) High performance at low supply voltageAbsolute Maximum Ratings Maximum TemperaturesStorage Tempera

Datasheet: HA9079 , HA9500 , HA9501 , HA9502 , HA9531 , HA9531A , HA9532 , HA9532A , 2222A , HCT2907A , HCT2907M , HDA412 , HDA420 , HDA496 , HEP637 , HEPG0001 , HEPG0002 .

 

 
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