All Transistors. HM965 Datasheet

 

HM965 Datasheet and Replacement


   Type Designator: HM965
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1.2 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150 MHz
   Collector Capacitance (Cc): 50 pF
   Forward Current Transfer Ratio (hFE), MIN: 340
   Noise Figure, dB: -
   Package: SOT-89
 

 HM965 Substitution

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HM965 Datasheet (PDF)

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HM965

Spec. No. : HE9511HI-SINCERITYIssued Date : 1996.04.12Revised Date : 2004.12.21MICROELECTRONICS CORP.Page No. : 1/4HM965NPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HM965 is designed for use as AF output amplifier and glash unit.SOT-89Features Low VCE(sat) High performance at low supply voltageAbsolute Maximum Ratings Maximum TemperaturesStorage Tempera

Datasheet: HM5551 , HM669A , HM6718 , HM772 , HM772A , HM882 , HM92 , HM94 , TIP32C , HMBT1015 , HMBT1815 , HMBT2222A , HMBT2369 , HMBT2907A , HMBT3904 , HMBT3906 , HMBT4401 .

History: HEPS9152 | UNR521K

Keywords - HM965 transistor datasheet

 HM965 cross reference
 HM965 equivalent finder
 HM965 lookup
 HM965 substitution
 HM965 replacement

 

 
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