All Transistors. HMBT5551 Datasheet

 

HMBT5551 Datasheet and Replacement


   Type Designator: HMBT5551
   SMD Transistor Code: G1
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.225 W
   Maximum Collector-Base Voltage |Vcb|: 180 V
   Maximum Collector-Emitter Voltage |Vce|: 160 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.6 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 6 pF
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: SOT-23
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HMBT5551 Datasheet (PDF)

 ..1. Size:40K  hsmc
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HMBT5551

Spec. No. : HE6838HI-SINCERITYIssued Date : 1994.07.29Revised Date : 2004.09.07MICROELECTRONICS CORP.Page No. : 1/4HMBT5551NPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HMBT5551 is designed for general purpose applications requiring highBreakdown Voltages.SOT-23Absolute Maximum Ratings Maximum TemperaturesStorage Temperature........................................

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HMBT5551

HMBT5551NPN-TRANSISTORNPN,600mA,180V NPN NPN High Voltage Transistor SMDHMBT5551HMBT5551LT1Excellent hFE linearityNPN, BECLow noiseHigh Voltage TransistorsComplementary to HMBT5401Transistor Polarity: NPNTransistor pinout: BECMMBT5551

 9.1. Size:38K  hsmc
 hmbt5401.pdf pdf_icon

HMBT5551

Spec. No. : HE6819HI-SINCERITYIssued Date : 1993.06.30Revised Date : 2004.09.07MICROELECTRONICS CORP.Page No. : 1/4HMBT5401PNP EPITAXIAL PLANAR TRANSISTORDescriptionThe HMBT5401 is designed for general purpose applications requiring highbreakdown voltages.SOT-23Features High Collector-Emitter Breakdown Voltage (BVCEO=150V@IC=1mA) Complements to NPN Type HMBT555

 9.2. Size:255K  cn haohai electr
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HMBT5551

HMBT5401PNP-TRANSISTOR-500mA,-150V PNP PNP High Voltage Transistor SMDHMBT5401HMBT5401LT1Complementary to HMBT5551PNP, BECTransistor Polarity: PNPGeneral Purpose TransistorsTransistor pinout: BECSOT-23 PackageMMBT5401Marking Code:

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