HMBTH10 pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

HMBTH10 Specs and Replacement

Type Designator: HMBTH10

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.225 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 15 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 650 MHz

Collector Capacitance (Cc): 1.5 pF

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: SOT-23

HMBTH10 Substitution

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HMBTH10 datasheet

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Spec. No. HN200101 HI-SINCERITY Issued Date 2000.02.01 Revised Date 2008.07.07 MICROELECTRONICS CORP. Page No. 1/4 HMBTH10 NPN EPITAXIAL PLANAR TRANSISTOR Description The HMBTH10 is designed for use in VHF & UHF oscillators and VHF mixer in tuner of a TV receiver. SOT-23 Features High frequency Very low capacitance Absolute Maximum Ratings Max... See More ⇒

Detailed specifications: HMBT8550, HMBTA06, HMBTA13, HMBTA14, HMBTA42, HMBTA44, HMBTA92, HMBTA94, BC548, HMJE13001, HMJE13003, HMJE13003D, HMJE13003E, HMJE13005, HMJE13007, HMJE13007A, HMJE13009A