HMJE13007 Datasheet, Equivalent, Cross Reference Search
Type Designator: HMJE13007
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 80 W
Maximum Collector-Base Voltage |Vcb|: 700 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO-220AB
HMJE13007 Transistor Equivalent Substitute - Cross-Reference Search
HMJE13007 Datasheet (PDF)
hmje13007.pdf
Spec. No. : HE200207 HI-SINCERITY Issued Date : 1993.04.12 Revised Date : 2007.03.06 MICROELECTRONICS CORP. Page No. : 1/5 HMJE13007 NPN EPITAXIAL PLANAR TRANSISTOR Description High Voltage, High Speed Power Switch TO-220 Switch Regulators PWM Inverters and Motor Controls Solenoid and Relay Drivers Deflection Circuits Absolute Maximum Ratings (T
hmje13007a.pdf
Spec. No. : HE200501 HI-SINCERITY Issued Date : 2005.06.01 Revised Date : 2007.03.06 MICROELECTRONICS CORP. Page No. : 1/5 HMJE13007A NPN EPITAXIAL PLANAR TRANSISTOR Description High Voltage, High Speed Power Switch TO-220 Switch Regulators PWM Inverters and Motor Controls Solenoid and Relay Drivers Deflection Circuits Absolute Maximum Ratings (
hmje13005.pdf
Spec. No. : HE6741 HI-SINCERITY Issued Date : 1993.04.12 Revised Date : 2007.03.06 MICROELECTRONICS CORP. Page No. : 1/5 HMJE13005 NPN EPITAXIAL PLANAR TRANSISTOR Description Switch Regulators TO-220 PWM Inverters and Motor Controls Solenoid and Relay Drivers Deflection Circuits Absolute Maximum Ratings (T =25C) A Maximum Temperatures Stora
hmje13001.pdf
Spec. No. : HA200213HI-SINCERITYIssued Date : 2002.06.01Revised Date : 2005.02.05MICROELECTRONICS CORP.Page No. : 1/4HMJE13001NPN Triple Diffused Planar Type High Voltage TransistorDescriptionThe HMJE13001 is a medium power transistor designed for use in switchingapplications.TO-92Features High breakdown voltage Low collector saturation voltage Fast switch
hmje13003d.pdf
Spec. No. : HD200207 HI-SINCERITY Issued Date : 1993.04.12 Revised Date : 2007.09.04 MICROELECTRONICS CORP. Page No. : 1/5 HMJE13003D NPN EPITAXIAL PLANAR TRANSISTOR Description High Voltage, High Speed Power Switch TO-126ML Switch Regulators PWM Inverters and Motor Controls Solenoid and Relay Drivers Deflection Circuits Absolute Maximum Ratings
hmje13003.pdf
Spec. No. : HT200210 HI-SINCERITY Issued Date : 2001.01.01 Revised Date : 2010.03.16 MICROELECTRONICS CORP. Page No. : 1/6 HMJE13003 NPN EPITAXIAL PLANAR TRANSISTOR Description High Voltage, High Speed Power Switch Switch Regulators PWM Inverters and Motor Controls TO-126 Solenoid and Relay Drivers Deflection Circuits Absolute Maximum Ratings (T
hmje13003e.pdf
Spec. No. : HE200502 HI-SINCERITY Issued Date : 2005.10.01 Revised Date : 2009.10.14 MICROELECTRONICS CORP. Page No. : 1/4 HMJE13003E NPN Epitaxial Planar Transistor Description High Voltage, High Speed Power Switch Switch Regulators PWM Inverters and Motor Controls TO-220 Solenoid and Relay Drivers Deflection Circuits Absolute Maximum Ratings (
hmje13009a.pdf
Spec. No. : HE200206HI-SINCERITYIssued Date : 2002.02.01Revised Date : 2006.07.04MICROELECTRONICS CORP.Page No. : 1/6HMJE13009A12 AMPERE NPN SILICON POWER TRANSISTORDescriptionThe HMJE13009A is designed for high-voltage, high-speed power switchinginductive circuits where fall time is critical. They are particularly suited for 115 and220V switch-controls, Solenoid/Relay dri
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2N3642
