HSB1109S Specs and Replacement
Type Designator: HSB1109S
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.9 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 160 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 140 MHz
Collector Capacitance (Cc): 5.5 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Package: TO-92
HSB1109S Substitution
- BJT ⓘ Cross-Reference Search
HSB1109S datasheet
Spec. No. HE6514 HI-SINCERITY Issued Date 1993.03.15 Revised Date 2005.02.14 MICROELECTRONICS CORP. Page No. 1/5 HSB1109S PNP EPITAXIAL PLANAR TRANSISTOR Description The HSB1109S is designed for low frequency and high voltage amplifier applications complementary pair with HSD1609S. TO-92 Absolute Maximum Ratings Maximum Temperatures Storage Temperature ................... See More ⇒
Spec. No. HE6607 HI-SINCERITY Issued Date 1993.03.15 Revised Date 2005.08.18 MICROELECTRONICS CORP. Page No. 1/4 HSB1109 PNP EPITAXIAL PLANAR TRANSISTOR Features Low frequency high voltage amplifier Complementary pair with HSD1609 TO-126ML Absolute Maximum Ratings (TA=25 C) Maximum Temperatures Storage Temperature ................................................. See More ⇒
Detailed specifications: HMPSA92M, HMPSA94, HPH2369, HPN2222A, HPN2907A, HSA1015, HSA733, HSB1109, S9014, HSB649A, HSB649T, HSB772, HSB772S, HSB857, HSB857D, HSB857J, HSC1815
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