HSB1109S Datasheet, Equivalent, Cross Reference Search
Type Designator: HSB1109S
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.9 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 160 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 140 MHz
Collector Capacitance (Cc): 5.5 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TO-92
HSB1109S Transistor Equivalent Substitute - Cross-Reference Search
HSB1109S Datasheet (PDF)
hsb1109s.pdf
Spec. No. : HE6514HI-SINCERITYIssued Date : 1993.03.15Revised Date : 2005.02.14MICROELECTRONICS CORP.Page No. : 1/5HSB1109SPNP EPITAXIAL PLANAR TRANSISTORDescriptionThe HSB1109S is designed for low frequency and high voltage amplifierapplications complementary pair with HSD1609S.TO-92Absolute Maximum Ratings Maximum TemperaturesStorage Temperature ................
hsb1109.pdf
Spec. No. : HE6607HI-SINCERITYIssued Date : 1993.03.15Revised Date : 2005.08.18MICROELECTRONICS CORP.Page No. : 1/4HSB1109PNP EPITAXIAL PLANAR TRANSISTORFeatures Low frequency high voltage amplifier Complementary pair with HSD1609TO-126MLAbsolute Maximum Ratings (TA=25C) Maximum TemperaturesStorage Temperature ..............................................
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
