HSC1815 Specs and Replacement
Type Designator: HSC1815
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.4 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 80 MHz
Collector Capacitance (Cc): 3.5 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Package: TO-92
HSC1815 Substitution
- BJT ⓘ Cross-Reference Search
HSC1815 datasheet
Spec. No. HE6523 HI-SINCERITY Issued Date 1992.11.25 Revised Date 2006.07.28 MICROELECTRONICS CORP. Page No. 1/4 HSC1815 NPN Epitaxial Planar Transistor Description The HSC1815 is designed for use in driver stage of AF amplifier general purpose amplification. TO-92 Absolute Maximum Ratings Maximum Temperatures Storage Temperature............................................ See More ⇒
Detailed specifications: HSB1109S, HSB649A, HSB649T, HSB772, HSB772S, HSB857, HSB857D, HSB857J, A940, HSC945, HSD1609, HSD1609S, HSD1616A, HSD313, HSD468, HSD667A, HSD669A
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