HSD468 Specs and Replacement
Type Designator: HSD468
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.9 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 190 MHz
Collector Capacitance (Cc): 22 pF
Forward Current Transfer Ratio (hFE), MIN: 85
Package: TO-92
HSD468 Substitution
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HSD468 datasheet
Spec. No. HE6535 HI-SINCERITY Issued Date 1992.11.25 Revised Date 2006.07.27 MICROELECTRONICS CORP. Page No. 1/5 HSD468 NPN Epitaxial Planar Transistor Description The HSD468 is designed for general purpose low frequency power amplifier applications. TO-92 Absolute Maximum Ratings Maximum Temperatures Storage Temperature..................................................... See More ⇒
Detailed specifications: HSB857D, HSB857J, HSC1815, HSC945, HSD1609, HSD1609S, HSD1616A, HSD313, 8050, HSD667A, HSD669A, HSD669AT, HSD879, HSD882, HSD882S, HSD965, HT112
Keywords - HSD468 pdf specs
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