HSD882 Specs and Replacement
Type Designator: HSD882
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 90 MHz
Collector Capacitance (Cc): 45 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Package: TO-126ML
HSD882 Substitution
- BJT ⓘ Cross-Reference Search
HSD882 datasheet
Spec. No. HE6004 HI-SINCERITY Issued Date 1998.03.15 Revised Date 2005.08.15 MICROELECTRONICS CORP. Page No. 1/5 HSD882 NPN EPITAXIAL PLANAR TRANSISTOR Description The HSD882 is designed for using in output stage of 1w audio amplifier, voltage regulator, DC-DC converter and relay driver. TO-126ML Absolute Maximum Ratings (TA=25 C) Maximum Temperatures Storage Temperat... See More ⇒
Spec. No. HE6544 HI-SINCERITY Issued Date 1992.11.25 Revised Date 2006.07.28 MICROELECTRONICS CORP. Page No. 1/5 HSD882S NPN Epitaxial Planar Transistor Description The HSD882S is suited for the output stage of 0.75W audio, voltage regulator, and relay driver. TO-92 Absolute Maximum Ratings Maximum Temperatures Storage Temperature.......................................... See More ⇒
Detailed specifications: HSD1609S, HSD1616A, HSD313, HSD468, HSD667A, HSD669A, HSD669AT, HSD879, 2SD2499, HSD882S, HSD965, HT112, HT117, HT772, HT882, HTIP112, HTIP117
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