All Transistors. HSD882S Datasheet

 

HSD882S Datasheet and Replacement


   Type Designator: HSD882S
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.75 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 90 MHz
   Collector Capacitance (Cc): 45 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: TO-92
 

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HSD882S Datasheet (PDF)

 ..1. Size:55K  hsmc
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HSD882S

Spec. No. : HE6544HI-SINCERITYIssued Date : 1992.11.25Revised Date : 2006.07.28MICROELECTRONICS CORP.Page No. : 1/5HSD882SNPN Epitaxial Planar TransistorDescriptionThe HSD882S is suited for the output stage of 0.75W audio, voltage regulator, and relaydriver.TO-92Absolute Maximum Ratings Maximum TemperaturesStorage Temperature.......................................

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HSD882S

Spec. No. : HE6004HI-SINCERITYIssued Date : 1998.03.15Revised Date : 2005.08.15MICROELECTRONICS CORP.Page No. : 1/5HSD882NPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HSD882 is designed for using in output stage of 1w audio amplifier, voltageregulator, DC-DC converter and relay driver.TO-126MLAbsolute Maximum Ratings (TA=25C) Maximum TemperaturesStorage Temperat

Datasheet: HSD1616A , HSD313 , HSD468 , HSD667A , HSD669A , HSD669AT , HSD879 , HSD882 , 2SC2625 , HSD965 , HT112 , HT117 , HT772 , HT882 , HTIP112 , HTIP117 , HTIP122 .

History: CSC1684 | PTC134 | NA21XG | ECG123A | BSV10-16 | 2N6193 | BDX55

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