HTIP42C Specs and Replacement
Type Designator: HTIP42C
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 65 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Package: TO-220AB
HTIP42C Substitution
- BJT ⓘ Cross-Reference Search
HTIP42C datasheet
Spec. No. HE6733 HI-SINCERITY Issued Date 1994.08.10 Revised Date 2004.11.19 MICROELECTRONICS CORP. Page No. 1/4 HTIP42C PNP EPITAXIAL PLANAR TRANSISTOR Description The HTIP42C is designed for use in general purpose amplifier and switching applications. TO-220 Absolute Maximum Ratings (TA=25 C) Maximum Temperatures Storage Temperature .................................... See More ⇒
Spec. No. HE6707 HI-SINCERITY Issued Date 1993.01.13 Revised Date 2004.11.19 MICROELECTRONICS CORP. Page No. 1/4 HTIP41C NPN EPITAXIAL PLANAR TRANSISTOR Description The HTIP41C is designed for use in general purpose amplifier and switching applications. TO-220 Absolute Maximum Ratings (TA=25 C) Maximum Temperatures Storage Temperature .................................... See More ⇒
Detailed specifications: HT117, HT772, HT882, HTIP112, HTIP117, HTIP122, HTIP127, HTIP41C, D880, HUN2111, HUN2112, HUN2113, HUN2114, HUN2115, HUN2116, HUN2130, HUN2131
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