All Transistors. BC637-16 Datasheet

 

BC637-16 Datasheet, Equivalent, Cross Reference Search

Type Designator: BC637-16

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.8 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 200 MHz

Collector Capacitance (Cc): 7 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: TO-92

BC637-16 Transistor Equivalent Substitute - Cross-Reference Search

 

BC637-16 Datasheet (PDF)

9.1. bc635 bc637 bc639.pdf Size:116K _motorola

BC637-16
BC637-16

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BC635/DHigh Current TransistorsBC635NPN SiliconBC637BC639COLLECTOR23BASE1EMITTER1MAXIMUM RATINGS23BC BC

9.2. bc637 bcp55 bcx55.pdf Size:153K _philips

BC637-16
BC637-16

BC637; BCP55; BCX5560 V, 1 A NPN medium power transistorsRev. 07 25 June 2007 Product data sheet1. Product profile1.1 General descriptionNPN medium power transistor series.Table 1. Product overviewType number[1] Package PNP complementNXP JEITA JEDECBC637[2] SOT54 SC-43A TO-92 BC638BCP55 SOT223 SC-73 - BCP52BCX55 SOT89 SC-62 TO-243 BCX52[1] Valid for all available sel

 9.3. bc635 bc637 bc639.pdf Size:47K _philips

BC637-16
BC637-16

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186BC635; BC637; BC639NPN medium power transistorsProduct specification 2001 Oct 10Supersedes data of 1999 Apr 23Philips Semiconductors Product specificationNPN medium power transistors BC635; BC637; BC639FEATURES PINNING High current (max. 1 A)PIN DESCRIPTION Low voltage (max. 80 V).1 base2 collectorAPPLIC

9.4. bc635 bc637 bc639 3.pdf Size:49K _philips

BC637-16
BC637-16

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186BC635; BC637; BC639NPN medium power transistors1999 Apr 23Product specificationSupersedes data of 1997 Mar 12Philips Semiconductors Product specificationNPN medium power transistors BC635; BC637; BC639FEATURES PINNING High current (max. 1 A)PIN DESCRIPTION Low voltage (max. 80 V).1 base2 collectorAPPLI

 9.5. bc635 bc637 bc639.pdf Size:55K _fairchild_semi

BC637-16
BC637-16

BC635/637/639Switching and Amplifier Applications Complement to BC636/638/640TO-9211. Emitter 2. Collector 3. BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCER Collector-Emitter Voltage at RBE=1K : BC635 45 V: BC637 60 V: BC639 100 VVCES Collector-Emitter Voltage : BC635 45 V: BC637 6

9.6. bc637 bc639 bc63916.pdf Size:92K _onsemi

BC637-16
BC637-16

BC637, BC639, BC639-16High Current TransistorsNPN SiliconFeatures These are Pb-Free Devices* http://onsemi.comCOLLECTOR2MAXIMUM RATINGS3Rating Symbol Value UnitBASECollector - Emitter Voltage VCEO VdcBC637 601BC639 80EMITTERCollector - Base Voltage VCBO VdcBC637 60BC639 80Emitter - Base Voltage VEBO 5.0 VdcCollector Current - Continuous IC 1.0 AdcTO-

9.7. bc637g bc639zl1g.pdf Size:96K _onsemi

BC637-16
BC637-16

BC637, BC639, BC639-16High Current TransistorsNPN SiliconFeatures These are Pb-Free Devices* http://onsemi.comCOLLECTOR2MAXIMUM RATINGS3Rating Symbol Value UnitBASECollector - Emitter Voltage VCEO VdcBC637 601BC639 80EMITTERCollector - Base Voltage VCBO VdcBC637 60BC639 80Emitter - Base Voltage VEBO 5.0 VdcCollector Current - Continuous IC 1.0 AdcTO-

9.8. bc635 bc636 bc637 bc638 bc639 bc640.pdf Size:115K _cdil

BC637-16
BC637-16

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySILICON PLANAR EPITAXIAL TRANSISTORS BC635, 637, 639 NPNBC636, 638, 640 PNPTO-92Plastic PackageFor Lead Free Parts, Device Part # will be Prefixed with "T"BCEHigh Current TransistorABSOLUTE MAXIMUM RATINGS (Ta=25C)BC635 BC637 BC639DESCRIPTION SYMBOLBC636 BC638 BC640 UNITVCE

9.9. bc637.pdf Size:28K _kec

BC637-16

SEMICONDUCTOR BC637TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH CURRENT TRANSISTORS.B CFEATURESComplementary to BC638.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDMAXIMUM RATING (Ta=25 )D 0.45E 1.00CHARACTERISTIC SYMBOL RATING UNIT F 1.27G 0.85H 0.45VCBOCollector-Base Voltage 60 V_HJ 14.00 + 0.50K 0.55 MAXVCEO F FCollector-Emitte

9.10. bc635 bc637 bc639.pdf Size:154K _lge

BC637-16
BC637-16

BC635/637/639(NPN)TO-92 Bipolar TransistorsTO-92 1. EMITTER 2. COLLECTOR 3. BASE Features High current transistors Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Emitter Voltage BC635 45 V BC637 60 V BC639 100 VVCEO Collector-Emitter Voltage BC635 45 V BC637 60 V BC639 80 V

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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