2N1199 Specs and Replacement
Type Designator: 2N1199
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 75 MHz
Collector Capacitance (Cc): 2.5 pF
Forward Current Transfer Ratio (hFE), MIN: 12
Package: TO9
2N1199 Substitution
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2N1199 datasheet
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Detailed specifications: 2N1191, 2N1192, 2N1193, 2N1194, 2N1195, 2N1196, 2N1197, 2N1198, BD135, 2N1199A, 2N120, 2N1200, 2N1201, 2N1202, 2N1203, 2N1204, 2N1204A
Keywords - 2N1199 pdf specs
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