2N60C Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N60C
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.18 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 85 °C
Transition Frequency (ft): 0.6 MHz
Collector Capacitance (Cc): 80 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package: TO5
2N60C Transistor Equivalent Substitute - Cross-Reference Search
2N60C Datasheet (PDF)
1.1. irfp22n60c3pbf.pdf 
Size:219K _upd-mosfet
PD - 95005 SMPS MOSFET IRFP22N60C3PbF Superjunction Power MOSFET AppIications l PFC and Primary Switch in SMPS l Uninterruptible Power Supply VDSS@TJ max RDS(on) typ. ID l High Speed Power Switching l Hard Switched and High Frequency Circuits 650V 155m 22A l Lead-Free Benefits D l Ultra Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dy
1.2. tsm2n60ch tsm2n60cp tsm2n60cz.pdf Size:453K _update_mosfet
TSM2N60 600V N-Channel Power MOSFET TO-220 TO-251 TO-252 Pin Definition: PRODUCT SUMMARY (IPAK) (DPAK) 1. Gate 2. Drain VDS (V) RDS(on)(Ω) ID (A) 3. Source 600 4.4 @ VGS =10V 1 General Description The TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFE
1.3. fqp12n60c.pdf Size:1701K _fairchild_semi
March 2014 FQP12N60C N-Channel QFET® MOSFET 600 V, 12 A, 650 mΩ Description Features These N-Channel enhancement mode power field effect • 12 A, 600 V, RDS(on) = 650 mΩ (Max.) @ VGS = 10 V, transistors are produced using Fairchild’s proprietary, planar ID = 6 A stripe, DMOS technology. This advanced technology has • Low Gate Charge (Typ. 48 nC) been especially tailored to
1.4. fqi12n60ctu.pdf Size:821K _fairchild_semi
September 2007 ® QFET FQB12N60C / FQI12N60C 600V N-Channel MOSFET Features Description • 12A, 600V, RDS(on) = 0.65Ω @VGS = 10 V These N-Channel enhancement mode power field effect • Low gate charge ( typical 48 nC) transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low Crss ( typical 21pF) This advanced technology has been especially
1.5. hgtp12n60c3d hgt1s12n60c3d.pdf Size:151K _fairchild_semi
HGTP12N60C3D, HGT1S12N60C3DS Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBT Features with Anti-Parallel Hyperfast Diodes 24A, 600V at TC = 25oC This family of MOS gated high voltage switching devices Typical Fall Time at TJ = 150oC . . . . . . . . . . . . . . . . 210ns combine the best features of MOSFETs and bipolar Short Circuit Rating transistors. The device ha
1.6. fqp2n60c fqpf2n60c.pdf Size:1366K _fairchild_semi
April 2006 QFET FQP2N60C/FQPF2N60C 2.0A, 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect rDS(on) = 4.7? @ VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge (typical 8.5 nC) planar stripe, DMOS technology. Low Crss (typical 4.3 pF) This advanced technology has been especially tailored to Fa
1.7. fqd2n60ctm.pdf Size:557K _fairchild_semi
November 2013 FQD2N60C / FQU2N60C N-Channel QFET® MOSFET 600 V, 1.9 A, 4.7 Ω Features Description • 1.9 A, 600 V, RDS(on) = 4.7 Ω (Max.) @ VGS = 10 V, This N-Channel enhancement mode power MOSFET is ID = 0.95 A produced using Fairchild Semiconductor’s proprietary • Low Gate Charge (Typ. 8.5 nC) planar stripe and DMOS technology. This advanced • Low Crss (Typ. 4.3 pF)
1.8. fqpf12n60c.pdf Size:1123K _fairchild_semi
November 2013 FQPF12N60C N-Channel QFET® MOSFET 600 V, 12 A, 650 mΩ Description Features These N-Channel enhancement mode power field effect • 12 A, 600 V, RDS(on) = 650 mΩ (Max.) @ VGS = 10 V, transistors are produced using Fairchild’s proprietary, planar ID = 6 A stripe, DMOS technology. This advanced technology has • Low Gate Charge (Typ. 48 nC) been especially tailored
1.9. fqu2n60ctu.pdf Size:762K _fairchild_semi
January 2009 QFET® FQD2N60C/FQU2N60C 600V N-Channel MOSFET Features Description • 1.9A, 600V, RDS(on) = 4.7Ω @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild’s proprietary, planar stripe, • Low gate charge (typical 8.5 nC) DMOS technology. • Low Crss (typical 4.3 pF) This advanced technology has been especially tail
1.10. fqd2n60c fqu2n60c.pdf Size:762K _fairchild_semi
January 2009 QFET FQD2N60C/FQU2N60C 600V N-Channel MOSFET Features Description 1.9A, 600V, RDS(on) = 4.7? @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchilds proprietary, planar stripe, Low gate charge (typical 8.5 nC) DMOS technology. Low Crss (typical 4.3 pF) This advanced technology has been especially tailored to mini-
1.11. hgtp12n60c3 hgt1s12n60c3.pdf Size:169K _fairchild_semi
HGTP12N60C3, HGT1S12N60C3S Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBTs Features The HGTP12N60C3 and HGT1S12N60C3S are MOS gated 24A, 600V at TC = 25oC high voltage switching devices combining the best features 600V Switching SOA Capability of MOSFETs and bipolar transistors. These devices have the Typical Fall Time. . . . . . . . . . . . . . . . 230ns at TJ = 15
1.12. hgtg12n60c3d.pdf Size:120K _fairchild_semi
HGTG12N60C3D Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBT Features with Anti-Parallel Hyperfast Diode 24A, 600V at TC = 25oC The HGTG12N60C3D is a MOS gated high voltage switching Typical Fall Time. . . . . . . . . . . . . . . . 210ns at TJ = 150oC device combining the best features of MOSFETs and bipolar Short Circuit Rating transistors. The device has the high i
1.13. fqb12n60ctm.pdf Size:821K _fairchild_semi
September 2007 ® QFET FQB12N60C / FQI12N60C 600V N-Channel MOSFET Features Description • 12A, 600V, RDS(on) = 0.65Ω @VGS = 10 V These N-Channel enhancement mode power field effect • Low gate charge ( typical 48 nC) transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low Crss ( typical 21pF) This advanced technology has been especially
1.14. fqpf12n60ct.pdf Size:803K _fairchild_semi
September 2006 ® QFET FQPF12N60CT 600V N-Channel MOSFET Features Description • 12A, 600V, RDS(on) = 0.65Ω @VGS = 10 V These N-Channel enhancement mode power field effect • Low gate charge ( typical 48 nC) transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low Crss ( typical 21 pF) This advanced technology has been especially tailored
1.15. fqp12n60c fqpf12n60c.pdf Size:1170K _fairchild_semi
September 2007 QFET FQP12N60C / FQPF12N60C 600V N-Channel MOSFET Features Description 12A, 600V, RDS(on) = 0.65? @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 48 nC) transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. Low Crss ( typical 21pF) This advanced technology has been especially tailored to
1.16. irf22n60c.pdf Size:358K _international_rectifier
RoHS IRF22N60 Series RoHS SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET 22A, 600Volts DESCRIPTION The Nell IRF22N60 is a three-terminal silicon device with current conduction capability of 22A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max. threshold voltage of 5 volts. G They are designed for use in applications such as
1.17. sps02n60c3 rev22.pdf Size:1186K _infineon
S VDS Tjmax ? G 1-3-11 S G -3-11
1.18. spd02n60c3 spu02n60c3.pdf Size:1013K _infineon
VDS Tjmax ? G G G G
1.19. spb02n60c3 rev.2.4.pdf Size:545K _infineon
VDS Tjmax ? G G
1.20. spp02n60c3 rev.2.7.pdf Size:456K _infineon
P VDS Tjmax ? G G
1.21. ixgr32n60cd1.pdf Size:571K _ixys
VCES = 600 V HiPerFASTTM IGBT IXGR 32N60CD1 IC25 = 45 A with Diode VCE(SAT) = 2.7 V ISOPLUS247TM tfi(typ) = 55 ns (Electrically Isolated Backside) Preliminary data sheet Symbol Test Conditions Maximum Ratings ISOPLUS 247TM (IXGR) E 153432 VCES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C; RGE = 1 M? 600 V VGES Continuous 20 V VGEM Transient 30 V G C IC25 TC = 25C45 A E Is
1.22. ixgr72n60c3d1.pdf Size:214K _ixys
TM VCES = 600V GenX3 600V IGBT IXGR72N60C3D1 IC110 = 35A with Diode ? VCE(sat) ? ?? 2.7V ? ? High-Speed Low-Vsat PT IGBT tfi(typ) = 55ns 40-100 kHz Switching Symbol Test Conditions Maximum Ratings ISOPLUS 247TM VCES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C, RGE = 1M? 600 V VGES Continuous 20 V G VGEM Transient 30 V C Isolated Tab E IC25 TC = 25C (Limited by Leads)
1.23. ixgh72n60c3.pdf Size:166K _ixys
VCES = 600V GenX3TM 600V IGBT IXGH72N60C3 IC110 = 72A ? ? VCE(sat) ? 2.5V ? ? tfi (typ) = 55ns High-Speed PT IGBT for 40-100kHz Switching Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C, RGE = 1M? 600 V VGES Continuous 20 V G VGEM Transient 30 V C Tab E IC25 TC = 25C (Limited by Leads) 75 A IC110 TC = 110C (Chip
1.24. ixgn72n60c3h1.pdf Size:223K _ixys
GenX3TM 600V IGBT VCES = 600V IXGN72N60C3H1 with Diode IC110 = 52A ? VCE(sat) ? ?? 2.50V ? ? tfi(typ) = 55ns High-Speed Low-Vsat PT IGBTs 40-100 kHz Switching SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings E VCES TJ = 25C to 150C 600 V G VCGR TJ = 25C to 150C, RGE = 1M? 600 V VGES Continuous 20 V VGEM Transient 30 V E IC25 TC = 25C 78 A C IC110
1.25. ixgx72n60c3h1.pdf Size:213K _ixys
VCES = 600V GenX3TM 600V IGBT IXGX72N60C3H1 IC110 = 72A with Diode ? VCE(sat) ? ?? 2.5V ? ? tfi(typ) = 55ns High-Speed PT IGBT for 40-100kHz Switching PLUS247 Symbol Test Conditions Maximum Ratings VCES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C, RGE = 1M? 600 V G G D VGES Continuous 20 V C ES Tab VGEM Transient 30 V IC25 TC = 25C (Limited by Leads) 75 A G = Gate C
1.26. hgtg12n60c3d .pdf Size:102K _harris_semi
S E M I C O N D U C T O R HGTG12N60C3D 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode January 1997 Features Package 24A, 600V at TC = 25oC JEDEC STYLE TO-247 Typical Fall Time . . . . . . . . . . . . . . 210ns at TJ = 150oC E C Short Circuit Rating G Low Conduction Loss Hyperfast Anti-Parallel Diode Description The HGTG12N60C3D is a MOS gated high
1.27. hgtp12n60c3.pdf Size:188K _harris_semi
HGTP12N60C3, HGT1S12N60C3, S E M I C O N D U C T O R HGT1S12N60C3S August 1995 24A, 600V, UFS Series N-Channel IGBT Features Packages JEDEC TO-220AB EMITTER 24A, 600V at TC = +25oC COLLECTOR GATE 600V Switching SOA Capability Typical Fall Time - 230ns at TJ = +150oC COLLECTOR (FLANGE) Short Circuit Rating Low Conduction Loss JEDEC TO-262AA Description EMITTER COLLECTOR
1.28. hgtg12n60c3d.pdf Size:106K _harris_semi
S E M I C O N D U C T O R HGTG12N60C3D 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode August 1995 Features Package 24A, 600V at TC = +25oC JEDEC STYLE TO-247 Typical Fall Time - 210ns at TJ = +150oC E C Short Circuit Rating G Low Conduction Loss Hyperfast Anti-Parallel Diode Description The HGTG12N60C3D is a MOS gated high voltage switching device
1.29. ixgp12n60cd1.pdf Size:69K _igbt
IXGA 12N60CD1 HiPerFASTTM IGBT VCES = 600 V IXGP 12N60CD1 LightspeedTM Series IC25 = 24 A VCE(sat) = 2.7 V tfi(typ) = 55 ns Symbol Test Conditions Maximum Ratings TO-263 (IXGA) VCES TJ = 25°C to 150°C 600 V G VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V E C (TAB) VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C24 A IC90 TC = 90°C12 A TO-220 AB ICM TC = 25°C,
1.30. ixgp12n60c.pdf Size:94K _igbt
VCES = 600 V IXGA 12N60C HiPerFASTTM IGBT IC25 = 24 A IXGP 12N60C VCE(sat)= 2.7 V tfi(typ) = 55 ns Symbol Test Conditions Maximum Ratings TO-263 AA (IXGA) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V G VGES Continuous ±20 V ↑ C (tab) E VGEM Transient ±30 V IC25 TC = 25°C24 A TO-220 AB IC90 TC = 90°C12 A (IXGP) ICM TC = 25°C, 1 ms 48
1.31. ixgh72n60c3.pdf Size:164K _igbt
VCES = 600V GenX3TM 600V IGBT IXGH72N60C3 IC110 = 72A ≤ ≤ VCE(sat) ≤ 2.5V ≤ ≤ tfi (typ) = 55ns High-Speed PT IGBT for 40-100kHz Switching Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ±20 V G VGEM Transient ±30 V C Tab E IC25 TC = 25°C (Limited by Leads) 75 A IC
1.32. ixgh32n60c.pdf Size:81K _igbt
IXGH 32N60C VCES = 600 V HiPerFASTTM IGBT IXGT 32N60C IC25 = 60 A LightspeedTM Series VCE(sat)typ = 2.1 V tfi typ = 55 ns TO-268 Symbol Test Conditions Maximum Ratings (IXGT) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V G E C (TAB) VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C60 A TO-247 AD (IXGH) IC110 TC = 110°C32 A ICM TC =
1.33. ixgh12n60c.pdf Size:54K _igbt
IXGH 12N60C HiPerFASTTM IGBT VCES = 600 V LightspeedTM Series IC25 = 24 A VCE(sat) = 2.7 V tfi(typ) = 55 ns Symbol Test Conditions Maximum Ratings TO-247 VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V C (TAB) G IC25 TC = 25°C24 A C E IC90 TC = 90°C12 A ICM TC = 25°C, 1 ms 48 A G = Gate, C = Collecto
1.34. ixgh32n60cd1.pdf Size:160K _igbt
IXGH 32N60CD1 VCES = 600 V HiPerFASTTM IGBT IXGT 32N60CD1 IC25 = 60 A with Diode VCE(SAT)typ = 2.1 V tfi(typ) = 55 ns Light Speed Series TO-247 AD (IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V G VGES Continuous ±20 V C (TAB) C VGEM Transient ±30 V E IC25 TC = 25°C60 A IC90 TC = 90°C32 A TO-268 (D
1.35. ixgn72n60c3h1.pdf Size:221K _igbt
GenX3TM 600V IGBT VCES = 600V IXGN72N60C3H1 with Diode IC110 = 52A ≤ VCE(sat) ≤ ≤£ 2.50V ≤ ≤ tfi(typ) = 55ns High-Speed Low-Vsat PT IGBTs 40-100 kHz Switching SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings E VCES TJ = 25°C to 150°C 600 V G VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V E IC25 TC
1.36. ixgh12n60cd1.pdf Size:59K _igbt
HiPerFASTTM IGBT IXGH 12N60CD1 VCES = 600 V IC25 = 24 A LightspeedTM Series VCE(sat) = 2.7 V tfi(typ) = 55 ns Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V C (TAB) G VGEM Transient ±30 V C E IC25 TC = 25°C24 A IC90 TC = 90°C12 A ICM TC = 25°C, 1 ms 48 A G = Gate, C = Co
1.37. ixgr12n60c.pdf Size:54K _igbt_a
IXGR 12N60C VCES = 600 V HiPerFASTTM IGBT IC25 = 15 A ISOPLUS247TM VCE(sat)= 2.7 V (Electrically Isolated Back Surface) tfi(typ) = 55 ns Symbol Test Conditions Maximum Ratings ISOPLUS 247 E153432 VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V G C E Isolated Backside* IC25 TC = 25°C15 A IC90 TC = 90°C
1.38. ixgt32n60c.pdf Size:81K _igbt_a
IXGH 32N60C VCES = 600 V HiPerFASTTM IGBT IXGT 32N60C IC25 = 60 A LightspeedTM Series VCE(sat)typ = 2.1 V tfi typ = 55 ns TO-268 Symbol Test Conditions Maximum Ratings (IXGT) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V G E C (TAB) VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C60 A TO-247 AD (IXGH) IC110 TC = 110°C32 A ICM TC =
1.39. ixgr32n60cd1.pdf Size:569K _igbt_a
VCES = 600 V HiPerFASTTM IGBT IXGR 32N60CD1 IC25 = 45 A with Diode VCE(SAT) = 2.7 V ISOPLUS247TM tfi(typ) = 55 ns (Electrically Isolated Backside) Preliminary data sheet Symbol Test Conditions Maximum Ratings ISOPLUS 247TM (IXGR) E 153432 VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V G C IC25 TC = 25°
1.40. ixgr72n60c3.pdf Size:221K _igbt_a
Preliminary Technical Information TM VCES = 600V GenX3 600V IGBT IXGR72N60C3 IC110 = 35A (Electrically Isolated Tab) VCE(sat) £ 2.7V tfi(typ) = 55ns High-Speed Low-Vsat PT IGBT 40-100 kHz Switching ISOPLUS 247TM Symbol Test Conditions Maximum Ratings VCES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C, RGE = 1M 600 V G C Isolated Tab VGES Co
1.41. ixgr72n60c3d1.pdf Size:211K _igbt_a
TM VCES = 600V GenX3 600V IGBT IXGR72N60C3D1 IC110 = 35A with Diode ≤ VCE(sat) ≤ ≤£ 2.7V ≤ ≤ High-Speed Low-Vsat PT IGBT tfi(typ) = 55ns 40-100 kHz Switching Symbol Test Conditions Maximum Ratings ISOPLUS 247TM VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ±20 V G VGEM Transient ±30 V C Isolated Tab E IC25 TC = 25
1.42. ixgr32n60c.pdf Size:536K _igbt_a
IXGR 32N60C VCE = 600 V HiPerFASTTM IGBT IC25 = 45 A Lightspeed Series VCE(sat) = 2.7 V ISOPLUS247TM package tfi typ = 55 ns (Electrically Isolated Back Side) Preliminary data sheet Symbol Test Conditions Maximum Ratings ISOPLUS 247TM E153432 VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V G C Isolated Backside* VGEM Transie
1.43. ixgt32n60cd1.pdf Size:163K _igbt_a
IXGH 32N60CD1 VCES = 600 V HiPerFASTTM IGBT IXGT 32N60CD1 IC25 = 60 A with Diode VCE(SAT)typ = 2.1 V tfi(typ) = 55 ns Light Speed Series TO-247 AD (IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V G VGES Continuous ±20 V C (TAB) C VGEM Transient ±30 V E IC25 TC = 25°C60 A IC90 TC = 90°C32 A TO-268 (D
1.44. ixgx72n60c3h1.pdf Size:211K _igbt_a
VCES = 600V GenX3TM 600V IGBT IXGX72N60C3H1 IC110 = 72A with Diode ≤ VCE(sat) ≤ ≤£ 2.5V ≤ ≤ tfi(typ) = 55ns High-Speed PT IGBT for 40-100kHz Switching PLUS247 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V G G D VGES Continuous ±20 V C ES Tab VGEM Transient ±30 V IC25 TC = 25°C (Limited by L
1.45. sif2n60c.pdf Size:333K _sisemi
深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N-沟道功率 MOS / N-CHANNEL POWER MOSFET SIF2N60C N- MOS 管/ N-CHANNEL POWER MOSFET SIF2N60C N
1.46. sif2n60c 1.pdf Size:368K _sisemi
深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N- MOS / N-CHANNEL POWER MOSFET SIF2N60C N- MOS / N-CHANNEL POWER MOSFET SIF2N60C N- MOS / N-CHANN
1.47. sif12n60c.pdf Size:293K _sisemi
深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N-沟道功率 MOS / N-CHANNEL POWER MOSFET SIF12N60C N- MOS 管/ N-CHANNEL POWER MOSFET SIF12N60C
1.48. ftp02n60c fta02n60c.pdf Size:237K _inpower_semi
FTP02N60C FTA02N60C N-Channel MOSFET Pb Lead Free Package and Finish Applications: VDSS RDS(ON) (Max.) ID • Adaptor • TV Main Power 600 V 4.4Ω 2 A • SMPS Power Supply • LCD Panel Power D Features: • RoHS Compliant • Low ON Resistance • Low Gate Charge • Peak Current vs Pulse Width Curve G G G Ordering Information DS DS TO-220F TO-220 S PART NUMBER PA
1.49. ftd02n60c ftu02n60c.pdf Size:254K _inpower_semi
FTD02N60C FTU02N60C N-Channel MOSFET Pb Lead Free Package and Finish Applications: VDSS RDS(ON) (Max.) ID • Adaptor • TV Main Power 600 V 4.4Ω 2 A • SMPS Power Supply • LCD Panel Power D Features: • RoHS Compliant • Low ON Resistance • Low Gate Charge • Peak Current vs Pulse Width Curve G G G Ordering Information DS DS TO-251 TO-252 S PART NUMBER PAC
1.50. cm2n60c to251.pdf Size:143K _jdsemi
R CM2N60C 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET ◆600V N-Channel VDMOS ◆使用及贮存时需防静电 使用及贮存时需防静电 使用及贮存时需防静电 使用及贮存时需防静电 ◆符合 RoHS 等
1.51. cm2n60c.pdf Size:122K _jdsemi
R CM2N60C 深圳市晶导电子有限公司 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET ◆600V N-Channel VDMOS ◆使用及贮存时需防静电 ◆符合 RoHS 等环保指令要求 1．主要用途 2 主要用于充电器、LD驱动、P 辅助 E C 电源等各类功率开关电路 1 2 2．主要特点 开关速度快 通态电阻小，输入电
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
