2N60C Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N60C
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.18 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 85 °C
Transition Frequency (ft): 0.6 MHz
Collector Capacitance (Cc): 80 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Package: TO5
2N60C Transistor Equivalent Substitute - Cross-Reference Search
2N60C Datasheet (PDF)
0.1. irfp22n60c3pbf.pdf 
Size:219K _international_rectifier
PD - 95005SMPS MOSFETIRFP22N60C3PbF Superjunction Power MOSFETAppIicationsl PFC and Primary Switch in SMPSl Uninterruptible Power SupplyVDSS@TJ max RDS(on) typ. IDl High Speed Power Switchingl Hard Switched and High Frequency Circuits650V 155m 22A l Lead-FreeBenefitsDl Ultra Low Gate Charge Qg results in Simple DriveRequirement l Improved Gate, Avalanche and Dy
0.2. irf22n60c.pdf Size:358K _international_rectifier
RoHS IRF22N60 Series RoHS SEMICONDUCTORNell High Power ProductsN-Channel Power MOSFET22A, 600VoltsDESCRIPTION The Nell IRF22N60 is a three-terminal silicon devicewith current conduction capability of 22A, fast switchingspeed, low on-state resistance, breakdown voltagerating of 600V, and max. threshold voltage of 5 volts.G They are designed for use in applications such as
0.3. fqp12n60c.pdf Size:1701K _fairchild_semi
March 2014FQP12N60C N-Channel QFET MOSFET 600 V, 12 A, 650 mDescription FeaturesThese N-Channel enhancement mode power field effect 12 A, 600 V, RDS(on) = 650 m (Max.) @ VGS = 10 V,transistors are produced using Fairchilds proprietary, planar ID = 6 Astripe, DMOS technology. This advanced technology has Low Gate Charge (Typ. 48 nC)been especially tailored to
0.4. fqb12n60ctm fqi12n60ctu.pdf Size:821K _fairchild_semi
September 2007 QFETFQB12N60C / FQI12N60C600V N-Channel MOSFETFeatures Description 12A, 600V, RDS(on) = 0.65 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 48 nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 21pF)This advanced technology has been especially
0.5. hgtp12n60c3d hgt1s12n60c3d.pdf Size:151K _fairchild_semi
HGTP12N60C3D, HGT1S12N60C3DSData Sheet December 200124A, 600V, UFS Series N-Channel IGBT Featureswith Anti-Parallel Hyperfast Diodes 24A, 600V at TC = 25oCThis family of MOS gated high voltage switching devices Typical Fall Time at TJ = 150oC . . . . . . . . . . . . . . . . 210ns combine the best features of MOSFETs and bipolar Short Circuit Rating transistors. The
0.6. fqp2n60c fqpf2n60c.pdf Size:1366K _fairchild_semi
April 2006QFETFQP2N60C/FQPF2N60C2.0A, 600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect rDS(on) = 4.7 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge (typical 8.5 nC)planar stripe, DMOS technology. Low Crss (typical 4.3 pF)This advanced technology has been especially tailo
0.7. fqd2n60ctm.pdf Size:557K _fairchild_semi
November 2013FQD2N60C / FQU2N60CN-Channel QFET MOSFET600 V, 1.9 A, 4.7 Features Description 1.9 A, 600 V, RDS(on) = 4.7 (Max.) @ VGS = 10 V, This N-Channel enhancement mode power MOSFET is ID = 0.95 Aproduced using Fairchild Semiconductors proprietary Low Gate Charge (Typ. 8.5 nC)planar stripe and DMOS technology. This advanced Low Crss (Typ. 4.3 pF)
0.8. fqpf12n60c.pdf Size:1123K _fairchild_semi
November 2013FQPF12N60C N-Channel QFET MOSFET 600 V, 12 A, 650 mDescription FeaturesThese N-Channel enhancement mode power field effect 12 A, 600 V, RDS(on) = 650 m (Max.) @ VGS = 10 V,transistors are produced using Fairchilds proprietary, planar ID = 6 Astripe, DMOS technology. This advanced technology has Low Gate Charge (Typ. 48 nC)been especially tailored
0.9. fqd2n60c fqu2n60c fqu2n60ctu.pdf Size:762K _fairchild_semi
January 2009QFETFQD2N60C/FQU2N60C 600V N-Channel MOSFETFeatures Description 1.9A, 600V, RDS(on) = 4.7 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge (typical 8.5 nC)DMOS technology. Low Crss (typical 4.3 pF)This advanced technology has been especially tail
0.10. hgtp12n60c3 hgt1s12n60c3.pdf Size:169K _fairchild_semi
HGTP12N60C3, HGT1S12N60C3SData Sheet December 200124A, 600V, UFS Series N-Channel IGBTs FeaturesThe HGTP12N60C3 and HGT1S12N60C3S are MOS gated 24A, 600V at TC = 25oChigh voltage switching devices combining the best features 600V Switching SOA Capabilityof MOSFETs and bipolar transistors. These devices have the Typical Fall Time. . . . . . . . . . . . . . . . 230ns a
0.11. hgtg12n60c3d.pdf Size:120K _fairchild_semi
HGTG12N60C3DData Sheet December 200124A, 600V, UFS Series N-Channel IGBT Featureswith Anti-Parallel Hyperfast Diode 24A, 600V at TC = 25oCThe HGTG12N60C3D is a MOS gated high voltage switching Typical Fall Time. . . . . . . . . . . . . . . . 210ns at TJ = 150oCdevice combining the best features of MOSFETs and bipolar Short Circuit Ratingtransistors. The device has t
0.12. fqpf12n60ct.pdf Size:803K _fairchild_semi
September 2006 QFETFQPF12N60CT600V N-Channel MOSFETFeatures Description 12A, 600V, RDS(on) = 0.65 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 48 nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 21 pF)This advanced technology has been especially tailored
0.13. fqp12n60c fqpf12n60c.pdf Size:1170K _fairchild_semi
September 2007 QFETFQP12N60C / FQPF12N60C 600V N-Channel MOSFETFeatures Description 12A, 600V, RDS(on) = 0.65 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 48 nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 21pF)This advanced technology has been especiall
0.14. spb02n60c3.pdf Size:545K _infineon
VDS Tjmax G G
0.15. spp02n60c3.pdf Size:456K _infineon
P VDS Tjmax G G
0.16. spn02n60c3.pdf Size:256K _infineon
SPN02N60C3Rev. 2.1Cool MOS Power TransistorVDS @ Tjmax 650 VFeatureRDS(on) 3 New revolutionary high voltage technologyID 0.4 A Ultra low gate chargeSOT223 Extreme dv/dt rated4 Ultra low effective capacitances321 VPS05163Type Package Ordering Code MarkingSPN02N60C3 SOT223 Q67040-S4553 02N60C3Maximum RatingsParameter Symbol Value UnitAC
0.17. spd02n60c3 spu02n60c3.pdf Size:603K _infineon
VDS Tjmax G G G G
0.18. sps02n60c3.pdf Size:1186K _infineon
S VDS Tjmax G 1-3-11 S G -3-11
0.19. ixgr12n60c.pdf Size:54K _ixys
IXGR 12N60C VCES = 600 VHiPerFASTTM IGBT IC25 = 15 AISOPLUS247TM VCE(sat)= 2.7 V(Electrically Isolated Back Surface)tfi(typ) = 55 nsSymbol Test Conditions Maximum Ratings ISOPLUS 247E153432VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VVGEM Transient 30 V GCE Isolated Backside*IC25 TC = 25C15 AIC90 TC = 90C
0.20. ixgp12n60cd1.pdf Size:69K _ixys
IXGA 12N60CD1HiPerFASTTM IGBTVCES = 600 VIXGP 12N60CD1LightspeedTM Series IC25 = 24 AVCE(sat) = 2.7 Vtfi(typ) = 55 nsSymbol Test Conditions Maximum RatingsTO-263 (IXGA)VCES TJ = 25C to 150C 600 VGVCGR TJ = 25C to 150C; RGE = 1 M 600 VEC (TAB)VGES Continuous 20 VVGEM Transient 30 VIC25 TC = 25C24 AIC90 TC = 90C12 ATO-220 ABICM TC = 25C,
0.21. ixgp12n60c.pdf Size:94K _ixys
VCES = 600 VIXGA 12N60CHiPerFASTTM IGBT IC25 = 24 AIXGP 12N60C VCE(sat)= 2.7 Vtfi(typ) = 55 nsSymbol Test Conditions Maximum RatingsTO-263 AA (IXGA)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VGVGES Continuous 20 V C (tab)EVGEM Transient 30 VIC25 TC = 25C24 ATO-220 ABIC90 TC = 90C12 A(IXGP)ICM TC = 25C, 1 ms 48
0.22. ixgt32n60c.pdf Size:81K _ixys
IXGH 32N60C VCES = 600 VHiPerFASTTM IGBTIXGT 32N60C IC25 = 60 ALightspeedTM SeriesVCE(sat)typ = 2.1 Vtfi typ = 55 nsTO-268Symbol Test Conditions Maximum Ratings (IXGT)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 MW 600 VGE C (TAB)VGES Continuous 20 VVGEM Transient 30 VIC25 TC = 25C60 ATO-247 AD (IXGH)IC110 TC = 110C32 AICM TC =
0.23. ixgr32n60cd1.pdf Size:569K _ixys
VCES = 600 VHiPerFASTTM IGBT IXGR 32N60CD1IC25 = 45 Awith DiodeVCE(SAT) = 2.7 VISOPLUS247TMtfi(typ) = 55 ns(Electrically Isolated Backside)Preliminary data sheetSymbol Test Conditions Maximum Ratings ISOPLUS 247TM (IXGR)E 153432VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VVGEM Transient 30 VGCIC25 TC = 25
0.24. ixgr72n60c3.pdf Size:221K _ixys
Preliminary Technical InformationTMVCES = 600VGenX3 600V IGBTIXGR72N60C3IC110 = 35A(Electrically Isolated Tab)VCE(sat) 2.7Vtfi(typ) = 55nsHigh-Speed Low-Vsat PT IGBT40-100 kHz SwitchingISOPLUS 247TMSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VGC Isolated TabVGES Co
0.25. ixgr72n60c3d1.pdf Size:211K _ixys
TMVCES = 600VGenX3 600V IGBTIXGR72N60C3D1IC110 = 35Awith DiodeVCE(sat) 2.7VHigh-Speed Low-Vsat PT IGBTtfi(typ) = 55ns40-100 kHz SwitchingSymbol Test Conditions Maximum RatingsISOPLUS 247TMVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VGVGEM Transient 30 VC Isolated TabEIC25 TC = 25
0.26. ixgh72n60c3.pdf Size:164K _ixys
VCES = 600VGenX3TM 600V IGBT IXGH72N60C3IC110 = 72A VCE(sat) 2.5V tfi (typ) = 55nsHigh-Speed PT IGBT for40-100kHz SwitchingSymbol Test Conditions Maximum RatingsTO-247 ADVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VGVGEM Transient 30 VC TabEIC25 TC = 25C (Limited by Leads) 75 AIC
0.27. ixgh32n60c.pdf Size:81K _ixys
IXGH 32N60C VCES = 600 VHiPerFASTTM IGBTIXGT 32N60C IC25 = 60 ALightspeedTM SeriesVCE(sat)typ = 2.1 Vtfi typ = 55 nsTO-268Symbol Test Conditions Maximum Ratings (IXGT)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 MW 600 VGE C (TAB)VGES Continuous 20 VVGEM Transient 30 VIC25 TC = 25C60 ATO-247 AD (IXGH)IC110 TC = 110C32 AICM TC =
0.28. ixgr32n60c.pdf Size:536K _ixys
IXGR 32N60C VCE = 600 VHiPerFASTTM IGBTIC25 = 45 ALightspeed SeriesVCE(sat) = 2.7 VISOPLUS247TM packagetfi typ = 55 ns(Electrically Isolated Back Side)Preliminary data sheetSymbol Test Conditions Maximum Ratings ISOPLUS 247TM E153432VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VGCIsolated Backside*VGEM Transie
0.29. ixgh12n60c.pdf Size:54K _ixys
IXGH 12N60CHiPerFASTTM IGBTVCES = 600 VLightspeedTM Series IC25 = 24 AVCE(sat) = 2.7 Vtfi(typ) = 55 nsSymbol Test Conditions Maximum RatingsTO-247VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VVGEM Transient 30 V C (TAB)GIC25 TC = 25C24 ACEIC90 TC = 90C12 AICM TC = 25C, 1 ms 48 AG = Gate, C = Collecto
0.30. ixgh32n60cd1.pdf Size:160K _ixys
IXGH 32N60CD1 VCES = 600 VHiPerFASTTM IGBTIXGT 32N60CD1 IC25 = 60 Awith DiodeVCE(SAT)typ = 2.1 Vtfi(typ) = 55 nsLight Speed SeriesTO-247 AD (IXGH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VGVGES Continuous 20 VC (TAB)CVGEM Transient 30 V EIC25 TC = 25C60 AIC90 TC = 90C32 ATO-268 (D
0.31. ixgn72n60c3h1.pdf Size:221K _ixys
GenX3TM 600V IGBT VCES = 600VIXGN72N60C3H1with Diode IC110 = 52AVCE(sat) 2.50Vtfi(typ) = 55nsHigh-Speed Low-Vsat PTIGBTs 40-100 kHz SwitchingSOT-227B, miniBLOC E153432Symbol Test Conditions Maximum RatingsE VCES TJ = 25C to 150C 600 VGVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VVGEM Transient 30 VE IC25 TC
0.32. ixgt32n60cd1.pdf Size:163K _ixys
IXGH 32N60CD1 VCES = 600 VHiPerFASTTM IGBTIXGT 32N60CD1 IC25 = 60 Awith DiodeVCE(SAT)typ = 2.1 Vtfi(typ) = 55 nsLight Speed SeriesTO-247 AD (IXGH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VGVGES Continuous 20 VC (TAB)CVGEM Transient 30 V EIC25 TC = 25C60 AIC90 TC = 90C32 ATO-268 (D
0.33. ixgx72n60c3h1.pdf Size:211K _ixys
VCES = 600VGenX3TM 600V IGBTIXGX72N60C3H1IC110 = 72Awith DiodeVCE(sat) 2.5Vtfi(typ) = 55nsHigh-Speed PT IGBT for40-100kHz SwitchingPLUS247Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VGGDVGES Continuous 20 V CES TabVGEM Transient 30 VIC25 TC = 25C (Limited by L
0.34. ixgh12n60cd1.pdf Size:59K _ixys
HiPerFASTTM IGBT IXGH 12N60CD1 VCES = 600 V IC25 = 24 ALightspeedTM Series VCE(sat) = 2.7 Vtfi(typ) = 55 nsSymbol Test Conditions Maximum Ratings TO-247 ADVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VC (TAB)GVGEM Transient 30 VCEIC25 TC = 25C24 AIC90 TC = 90C12 AICM TC = 25C, 1 ms 48 AG = Gate, C = Co
0.35. fqp12n60c.pdf Size:1848K _onsemi
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
0.36. fqp2n60c fqpf2n60c.pdf Size:1596K _onsemi
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
0.37. fqpf12n60c.pdf Size:1123K _onsemi
November 2013FQPF12N60C N-Channel QFET MOSFET 600 V, 12 A, 650 mDescription FeaturesThese N-Channel enhancement mode power field effect 12 A, 600 V, RDS(on) = 650 m (Max.) @ VGS = 10 V,transistors are produced using Fairchilds proprietary, planar ID = 6 Astripe, DMOS technology. This advanced technology has Low Gate Charge (Typ. 48 nC)been especially tailored
0.38. fqd2n60c fqu2n60c.pdf Size:618K _onsemi
TMQFETFQD2N60C / FQU2N60C600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 1.9A, 600V, RDS(on) = 4.7 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 8.5 nC)planar stripe, DMOS technology. Low Crss ( typical 4.3 pF)This advanced technology has been especially tailored
0.39. hgtg12n60c3d .pdf Size:102K _harris_semi
S E M I C O N D U C T O R HGTG12N60C3D24A, 600V, UFS Series N-Channel IGBTwith Anti-Parallel Hyperfast DiodeJanuary 1997Features Package 24A, 600V at TC = 25oCJEDEC STYLE TO-247 Typical Fall Time . . . . . . . . . . . . . . 210ns at TJ = 150oCEC Short Circuit RatingG Low Conduction Loss Hyperfast Anti-Parallel DiodeDescriptionThe HGTG12N60C3D is a MO
0.40. hgtp12n60c3.pdf Size:188K _harris_semi
HGTP12N60C3, HGT1S12N60C3,S E M I C O N D U C T O R HGT1S12N60C3SAugust 1995 24A, 600V, UFS Series N-Channel IGBTFeatures Packages JEDEC TO-220ABEMITTER 24A, 600V at TC = +25oCCOLLECTORGATE 600V Switching SOA Capability Typical Fall Time - 230ns at TJ = +150oCCOLLECTOR(FLANGE) Short Circuit Rating Low Conduction LossJEDEC TO-262AADescriptionEMITTER
0.41. hgtg12n60c3d.pdf Size:106K _harris_semi
S E M I C O N D U C T O R HGTG12N60C3D24A, 600V, UFS Series N-Channel IGBTwith Anti-Parallel Hyperfast DiodeAugust 1995Features Package 24A, 600V at TC = +25oCJEDEC STYLE TO-247 Typical Fall Time - 210ns at TJ = +150oCEC Short Circuit RatingG Low Conduction Loss Hyperfast Anti-Parallel DiodeDescriptionThe HGTG12N60C3D is a MOS gated high voltage swit
0.42. tsm2n60ch tsm2n60cp tsm2n60cz.pdf Size:453K _taiwansemi
TSM2N60 600V N-Channel Power MOSFET TO-220 TO-251 TO-252 Pin Definition: PRODUCT SUMMARY (IPAK) (DPAK) 1. Gate 2. Drain VDS (V) RDS(on)() ID (A) 3. Source 600 4.4 @ VGS =10V 1 General Description The TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFE
0.43. sif2n60c.pdf Size:333K _sisemi
Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationN- MOS / N-CHANNEL POWER MOSFET SIF2N60CN- MOS / N-CHANNEL POWER MOSFET SIF2N60CN
0.44. sif2n60c 1.pdf Size:368K _sisemi
Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationN- MOS / N-CHANNEL POWER MOSFET SIF2N60CN- MOS / N-CHANNEL POWER MOSFET SIF2N60CN- MOS / N-CHANN
0.45. sif12n60c.pdf Size:293K _sisemi
Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationN- MOS / N-CHANNEL POWER MOSFET SIF12N60CN- MOS / N-CHANNEL POWER MOSFET SIF12N60C
0.46. jcs12n60ct jcs12n60ft jcs12n60st jcs12n60bt.pdf Size:1207K _jilin_sino
N RN-CHANNEL MOSFET JCS12N60T Package MAIN CHARACTERISTICS ID 12.0A VDSS 600 V Rdson-max 0.65 @Vgs=10V Qg 39 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge L
0.47. jcs2n60r jcs2n60v jcs2n60c jcs2n60f.pdf Size:1443K _jilin_sino
N RN-CHANNEL MOSFET JCS2N60 MAIN CHARACTERISTICS Package ID 2.0 A VDSS 600 V Rdson-max 5 Vgs=10V Qg 15.3 nC APPLICATIONS High frequency switching mode power supply Electronic ballast UPS UPS FEATURES
0.48. jcs2n60vb jcs2n60rb jcs2n60cb jcs2n60fb jcs2n60mb jcs2n60mfb.pdf Size:924K _jilin_sino
N RN-CHANNEL MOSFET JCS2N60B MAIN CHARACTERISTICS Package ID 2.0 A VDSS 600 V RdsonVgs=10V 4.5 -MAX Qg-TYP 5.9nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge
0.49. jcs2n60t jcs2n60v jcs2n60r jcs2n60c jcs2n60f.pdf Size:1813K _jilin_sino
R JCS2N60C JCS2N60C MAIN CHARACTERISTICS Package ID 2.0 A VDSS 600 V Rdson-max5.0 Vgs=10V Qg-typ 8.1 nC APPLICATIONS l High efficiency switch l mode power supplies l l Electronic lamp ballasts l LED based on half bridge l LED power supplie FEATURES l Low gate c
0.50. jcs2n60t jcs2n60mf jcs2n60v jcs2n60r jcs2n60c jcs2n60f.pdf Size:1742K _jilin_sino
R JCS2N60C JCS2N60C MAIN CHARACTERISTICS Package ID 2.0 A VDSS 600 V Rdson-max5.0 Vgs=10V Qg-typ 8.1 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED power supplie FEATURES
0.51. ftp02n60c fta02n60c.pdf Size:237K _inpower_semi
FTP02N60CFTA02N60CN-Channel MOSFET PbLead Free Package and FinishApplications:VDSS RDS(ON) (Max.) ID Adaptor TV Main Power600 V 4.4 2 A SMPS Power Supply LCD Panel Power DFeatures: RoHS Compliant Low ON Resistance Low Gate Charge Peak Current vs Pulse Width CurveG GGOrdering InformationDSDS TO-220FTO-220 SPART NUMBER PA
0.52. ftd02n60c ftu02n60c.pdf Size:254K _inpower_semi
FTD02N60CFTU02N60CN-Channel MOSFET PbLead Free Package and FinishApplications:VDSS RDS(ON) (Max.) ID Adaptor TV Main Power600 V 4.4 2 A SMPS Power Supply LCD Panel Power DFeatures: RoHS Compliant Low ON Resistance Low Gate Charge Peak Current vs Pulse Width CurveG GGOrdering InformationDSDS TO-251TO-252 SPART NUMBER PAC
0.53. cm2n60c to251.pdf Size:143K _jdsemi
RCM2N60C www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS
0.54. cm2n60c.pdf Size:122K _jdsemi
RCM2N60C www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS 1 2LDP E C122
0.55. svf2n60cn svf2n60cnf svf2n60cm svf2n60cmj svf2n60cf svf2n60cd.pdf Size:434K _silan
SVF2N60CN/NF/M/MJ/F/D 2A600V N 2SVF2N60CN/NF/M/MJ/F/D N MOS 13 F-CellTM VDMOS TO-252-2L13
0.56. slp12n60c slf12n60c.pdf Size:1352K _maple_semi
SLP12N60C / SLF12N60C600V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 12.0A, 600V, RDS(on)typ = 0.51@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 44.7nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switch
0.57. cs2n60f cs2n60p cs2n60u cs2n60d cs2n60c.pdf Size:470K _convert
nvertSuzhou Convert Semiconductor Co ., Ltd.CS2N60F,CS2N60P,CS2N60U,CS2N60D,CS2N60C600V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS2N60F
0.58. fqd2n60c.pdf Size:804K _cn_vbsemi
FQD2N60Cwww.VBsemi.twN-Channel 650 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 650AvailableRequirementRDS(on) ()VGS = 10 V 3.8RoHS Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 15RuggednessQgs (nC) 3 Fully Characterized Capacitance and Avalanche Voltageand CurrentQgd (nC) 6 Compliant to RoHS
0.59. spd02n60c3.pdf Size:242K _inchange_semiconductor
isc N-Channel MOSFET Transistor SPD02N60C3,ISPD02N60C3FEATURESStatic drain-source on-resistance:RDS(on)3Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONUltra low effective capacitanceABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage
0.60. spb02n60c3.pdf Size:258K _inchange_semiconductor
Isc N-Channel MOSFET Transistor SPB02N60C3FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vo
0.61. spp02n60c3.pdf Size:247K _inchange_semiconductor
isc N-Channel MOSFET Transistor SPP02N60C3ISPP02N60C3FEATURESStatic drain-source on-resistance:RDS(on) 3Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONUltra low gate chargeUltra low effective capacitanceABSOLUTE MAXIMUM RATINGS(T =25)a
0.62. fqpf12n60c.pdf Size:224K _inchange_semiconductor
isc N-Channel Mosfet Transistor FQPF12N60CFEATURESDrain Current I = 12A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.65(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned for high efficiency switch mode power supply.A
0.63. spu02n60c3.pdf Size:261K _inchange_semiconductor
isc N-Channel MOSFET Transistor SPU02N60C3FEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE
Datasheet: 2N6094 , 2N6095 , 2N6096 , 2N6097 , 2N6098 , 2N6099 , 2N60A , 2N60B , 2SC5200 , 2N61 , 2N610 , 2N6100 , 2N6101 , 2N6102 , 2N6103 , 2N6104 , 2N6105 .
