2N610 Datasheet and Replacement

   Type Designator: 2N610
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.18 W
   Maximum Collector-Base Voltage |Vcb|: 25 V
   Maximum Collector-Emitter Voltage |Vce|: 15 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.2 A
   Max. Operating Junction Temperature (Tj): 100 °C
   Transition Frequency (ft): 1.5 MHz
   Collector Capacitance (Cc): 15 pF
   Forward Current Transfer Ratio (hFE), MIN: 65
   Noise Figure, dB: -
   Package: TO5

2N610 Substitution

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2N610 Datasheet (PDF)

0.1. Size:149K motorola
2n6107 2n6111 2n6288 2n6109 2n6292.pdf pdf_icon

Order this documentMOTOROLAby 2N6107/DSEMICONDUCTOR TECHNICAL DATA2N6057 thru 2N6059(See 2N6050)Complementary Silicon PlasticPNPPower Transistors 2N6107. . . designed for use in generalpurpose amplifier and switching applications.2N6109* DC Current Gain Specified to 7.0 AmpereshFE = 30150 @ IC = 3.0 Adc 2N6111, 2N6288hFE = 2.3 (Min) @ IC = 7.0 Adc All

0.2. Size:48K st
2n6107 2n6111.pdf pdf_icon

2N61072N6111SILICON PNP SWITCHING TRANSISTORS STMicroelectronics PREFERREDSALESTYPE PNP TRANSISTORS APPLICATIONS: LINEAR AND SWITCHING INDUSTRIALEQUIPMENT 321DESCRIPTION The 2N6107 and 2N6111 are epitaxial-base PNPTO-220silicon transistors in Jedec TO-220 plasticpackage. They are intended for a wide variety ofmedium power switching and linear applications

0.3. Size:70K central
2n6107 2n6109 2n6111 2n6288 2n6290 2n6292.pdf pdf_icon

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

0.4. Size:241K onsemi
2n6107g 2n6109g 2n6111g 2n6288g 2n6292g.pdf pdf_icon

2N6107, 2N6109, 2N6111 (PNP),2N6288, 2N6292 (NPN)Complementary SiliconPlastic Power TransistorsThese devices are designed for use in general-purpose amplifier andswitching applications.www.onsemi.comFeatures7 AMPERE High DC Current Gain High Current Gain - Bandwidth ProductPOWER TRANSISTORS TO-220 Compact PackageCOMPLEMENTARY SILICON These Devices are Pb-

0.5. Size:102K onsemi
2n6109g 2n6109g 2n6107g.pdf pdf_icon

0.6. Size:241K onsemi
2n6107 2n6109 2n6111 2n6288 2n6292.pdf pdf_icon

0.7. Size:102K onsemi
2n6107g.pdf pdf_icon

0.8. Size:101K bocasemi
2n6106 2n6107 2n6108 2n6109 2n6110 2n6111 2n6288 2n6289 2n6290 2n6291 2n6292 2n6293 2n6473 2n6474 2n6475 2n6476.pdf pdf_icon

Boca Semiconductor Corp. BSC http://www.bocasemi.comhttp://www.bocasemi.com

0.9. Size:95K cdil
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Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPLASTIC POWER TRANSISTORS 2N6107 PNP2N6292 NPNTO-220Plastic PackageGeneral Purpose Amplifier and Switching ApplicationsABSOLUTE MAXIMUM RATINGS (Ta=25C)DESCRIPTION SYMBOL VALUE UNITVCBOCollector Base Voltage 80 VCollector Emitter Voltage VCEO 70 VCollector Emitter Voltage (RBE= 100

0.10. Size:315K cdil
2n6101.pdf pdf_icon

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyTO-220 Plastic Package 2N61012N6101 NPN PLASTIC POWER TRANSISTORMedium Power Linear and Switching Service in Consumer, Automotive,and Industrial ApplicationsPIN CONFIGURATION41. BASE2. COLLECTOR3. EMITTER4. COLLECTOR123CDIM MIN. MAX.B EFA 14.42 16.51B 9.63 10.67C 3.

0.11. Size:249K cdil
2n6109.pdf pdf_icon

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyTO-220 Plastic Package 2N61092N6109 PNP PLASTIC POWER TRANSISTORGeneral Purpose Amplifier and Switching ApplicationPIN CONFIGURATION41. BASE2. COLLECTOR3. EMITTER4. COLLECTOR123CDIM MIN. MAX.EBFA 14.42 16.51B 9.63 10.67C 3.56 4.83D0.90E 1.15 1.401 2 3F 3.75

0.12. Size:99K jmnic
2n6102 2n6103.pdf pdf_icon

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6102 2N6103 DESCRIPTION With TO-220 package 2N6102 with short pin APPLICATIONS For use in general-purpose amplifier and switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE

0.13. Size:106K jmnic
2n6098 2n6099 2n6100 2n6101.pdf pdf_icon

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6098 2N6099 2N6100 2N6101 DESCRIPTION With TO-220 package APPLICATIONS For use in general-purpose amplifier and switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT2N

0.14. Size:198K inchange semiconductor
2n6107.pdf pdf_icon

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2N6107DESCRIPTIONDC Current Gain-: h = 30-150@ I = -2AFE CCollector-Emitter Sustaining Voltage-: V = -70V(Min)CEO(SUS)Complement to Type 2N6292Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general-purpose amplifier andswitching applicati

0.15. Size:195K inchange semiconductor
2n6103.pdf pdf_icon

isc Silicon NPN Power Transistor 2N6103DESCRIPTIONDC Current Gain -: h = 15-60@ I = 8AFE CCollector-Emitter Sustaining Voltage-: V = 40V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in medium power liner amplifier andswitching service in consumer ,automotive and industrialapplications.

0.16. Size:57K inchange semiconductor
2n6102 2n6103.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6102 2N6103 DESCRIPTION With TO-220 package 2N6102 type with short pin APPLICATIONS For use in general-purpose amplifier and switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CON

0.17. Size:119K inchange semiconductor
2n6098 2n6099 2n6100 2n6101.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6098 2N6099 2N6100 2N6101 DESCRIPTION With TO-220 package High current capability APPLICATIONS For use in general-purpose amplifier and switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25) SYMBOL PA

0.18. Size:197K inchange semiconductor
2n6106.pdf pdf_icon

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2N6106DESCRIPTIONDC Current Gain-: h = 30-150@ I = -2AFE CCollector-Emitter Sustaining Voltage-: V = -70V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general-purpose amplifier andswitching applicationsABSOLUTE MAXIMUM RATINGS

0.19. Size:121K inchange semiconductor
2n6106 2n6108 2n6110.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6106 2N6108 2N6110 DESCRIPTION With TO-220 package With short pin APPLICATIONS Power amplifier and switching circuits applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 BaseAbsolute maximum ratings(Ta=2

0.20. Size:195K inchange semiconductor
2n6101.pdf pdf_icon

isc Silicon NPN Power Transistor 2N6101DESCRIPTIONDC Current Gain -: h = 20-80@ I = 5AFE CCollector-Emitter Sustaining Voltage-: V = 70V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in medium power liner amplifier andswitching service in consumer ,automotive and industrialapplications.

0.21. Size:191K inchange semiconductor
2n6108.pdf pdf_icon

isc Silicon PNP Power Transistor 2N6108DESCRIPTIONDC Current Gain-: h = 30-150@ I = -2AFE CCollector-Emitter Sustaining Voltage-: V = -50V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general-purpose amplifier andswitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA

0.22. Size:197K inchange semiconductor
2n6109.pdf pdf_icon

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2N6109DESCRIPTIONDC Current Gain-: h = 30-150@ I = -2.5AFE CCollector-Emitter Sustaining Voltage-: V = -50V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general-purpose amplifier andswitching applicationsABSOLUTE MAXIMUM RATIN

0.23. Size:121K inchange semiconductor
2n6107 2n6109 2n6111.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6107 2N6109 2N6111 DESCRIPTION With TO-220 package Complement to NPN type: 2N6288; 2N6290 ;2N6292 APPLICATIONS Power amplifier and switching circuits applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 B

0.24. Size:187K inchange semiconductor
2n6102.pdf pdf_icon

isc Silicon NPN Power Transistor 2N6102DESCRIPTIONDC Current Gain -: h = 20-80@ I = 5AFE CCollector-Emitter Sustaining Voltage-: V = 40V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general-purpose amplifier andswitching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR

0.25. Size:188K inchange semiconductor
2n6100.pdf pdf_icon

isc Silicon NPN Power Transistor 2N6100DESCRIPTIONDC Current Gain -: h = 20-80@ I = 5AFE CCollector-Emitter Sustaining Voltage-: V = 70V(Min)CEO(SUS)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general-purpose amplifier andswitching applications.ABSOLUTE MAXIMUM RATINGS

Datasheet: 2N6096 , 2N6097 , 2N6098 , 2N6099 , 2N60A , 2N60B , 2N60C , 2N61 , 2SC5200 , 2N6100 , 2N6101 , 2N6102 , 2N6103 , 2N6104 , 2N6105 , 2N6106 , 2N6107 .