2N610 Todos los transistores

 

2N610 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N610

Material: Ge

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.18 W

Tensión colector-base (Vcb): 25 V

Tensión colector-emisor (Vce): 15 V

Tensión emisor-base (Veb): 10 V

Corriente del colector DC máxima (Ic): 0.2 A

Temperatura operativa máxima (Tj): 100 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 1.5 MHz

Capacitancia de salida (Cc): 15 pF

Ganancia de corriente contínua (hfe): 65

Empaquetado / Estuche: TO5

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2N610 Datasheet (PDF)

1.1. 2n6109g.pdf Size:102K _upd

2N610
2N610

2N6107, 2N6109, 2N6111 (PNP), 2N6288, 2N6292 (NPN) Complementary Silicon Plastic Power Transistors These devices are designed for use in general-purpose amplifier and switching applications. www.onsemi.com Features 7 AMPERE • High DC Current Gain • High Current Gain - Bandwidth Product POWER TRANSISTORS • TO-220 Compact Package COMPLEMENTARY SILICON • These Devices are Pb-

1.2. 2n6109g 2n6107g.pdf Size:102K _upd

2N610
2N610

2N6107, 2N6109, 2N6111 (PNP), 2N6288, 2N6292 (NPN) Complementary Silicon Plastic Power Transistors These devices are designed for use in general-purpose amplifier and switching applications. www.onsemi.com Features 7 AMPERE • High DC Current Gain • High Current Gain - Bandwidth Product POWER TRANSISTORS • TO-220 Compact Package COMPLEMENTARY SILICON • These Devices are Pb-

 1.3. 2n6107g.pdf Size:102K _upd

2N610
2N610

2N6107, 2N6109, 2N6111 (PNP), 2N6288, 2N6292 (NPN) Complementary Silicon Plastic Power Transistors These devices are designed for use in general-purpose amplifier and switching applications. www.onsemi.com Features 7 AMPERE • High DC Current Gain • High Current Gain - Bandwidth Product POWER TRANSISTORS • TO-220 Compact Package COMPLEMENTARY SILICON • These Devices are Pb-

1.4. 2n6107 2n6111 2n6288 2n6109 2n6292.pdf Size:149K _motorola

2N610
2N610

Order this document MOTOROLA by 2N6107/D SEMICONDUCTOR TECHNICAL DATA 2N6057 thru 2N6059 (See 2N6050) Complementary Silicon Plastic PNP Power Transistors 2N6107 . . . designed for use in generalpurpose amplifier and switching applications. 2N6109* DC Current Gain Specified to 7.0 Amperes hFE = 30150 @ IC = 3.0 Adc 2N6111, 2N6288 hFE = 2.3 (Min) @ IC = 7.0 Adc All Devices 2N61

 1.5. 2n6107 2n6111.pdf Size:48K _st

2N610
2N610

2N6107 2N6111 SILICON PNP SWITCHING TRANSISTORS STMicroelectronics PREFERRED SALESTYPE PNP TRANSISTORS APPLICATIONS: LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT 3 2 1 DESCRIPTION The 2N6107 and 2N6111 are epitaxial-base PNP TO-220 silicon transistors in Jedec TO-220 plastic package. They are intended for a wide variety of medium power switching and linear applications. I

1.6. 2n6107 2n6109 2n6111 2n6288 2n6290 2n6292.pdf Size:70K _central

2N610

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824

1.7. 2n6107 2n6109 2n6111 2n6288 2n6292.pdf Size:90K _onsemi

2N610
2N610

PNP - 2N6107, 2N6109, 2N6111; NPN - 2N6288, 2N6292 2N6109 and 2N6292 are Preferred Devices Complementary Silicon Plastic Power Transistors http://onsemi.com These devices are designed for use in general-purpose amplifier and switching applications. 7 AMPERE Features POWER TRANSISTORS DC Current Gain Specified to 7.0 Amperes hFE = 30-150 @ IC COMPLEMENTARY SILICON = 3.0 Adc - 2N611

1.8. 2n6106 2n6107 2n6108 2n6109 2n6110 2n6111 2n6288 2n6289 2n6290 2n6291 2n6292 2n6293 2n6473 2n6474 2n6475 2n6476.pdf Size:101K _bocasemi

2N610
2N610

Boca Semiconductor Corp. BSC http://www.bocasemi.com http://www.bocasemi.com

1.9. 2n6109.pdf Size:249K _cdil

2N610
2N610

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package 2N6109 2N6109 PNP PLASTIC POWER TRANSISTOR General Purpose Amplifier and Switching Application PIN CONFIGURATION 4 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 1 2 3 C DIM MIN. MAX. E B F A 14.42 16.51 B 9.63 10.67 C 3.56 4.83 D0.90 E 1.15 1.40 1 2 3 F 3.75 3.8

1.10. 2n6107 2n6292.pdf Size:95K _cdil

2N610
2N610

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PLASTIC POWER TRANSISTORS 2N6107 PNP 2N6292 NPN TO-220 Plastic Package General Purpose Amplifier and Switching Applications ABSOLUTE MAXIMUM RATINGS (Ta=25?C) DESCRIPTION SYMBOL VALUE UNIT VCBO Collector Base Voltage 80 V Collector Emitter Voltage VCEO 70 V Collector Emitter Voltage (RBE= 100 ) V

1.11. 2n6101.pdf Size:315K _cdil

2N610
2N610

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package 2N6101 2N6101 NPN PLASTIC POWER TRANSISTOR Medium Power Linear and Switching Service in Consumer, Automotive, and Industrial Applications PIN CONFIGURATION 4 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 1 2 3 C DIM MIN. MAX. B E F A 14.42 16.51 B 9.63 10.67 C 3.56

1.12. 2n6098 2n6099 2n6100 2n6101.pdf Size:106K _jmnic

2N610
2N610

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6098 2N6099 2N6100 2N6101 DESCRIPTION · ·With TO-220 package APPLICATIONS ·For use in general-purpose amplifier and switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2N6098

1.13. 2n6102 2n6103.pdf Size:99K _jmnic

2N610
2N610

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6102 2N6103 DESCRIPTION ·With TO-220 package ·2N6102 with short pin APPLICATIONS ·For use in general-purpose amplifier and switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT

1.14. 2n6109.pdf Size:188K _inchange_semiconductor

2N610
2N610

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2N6109 DESCRIPTION ·DC Current Gain: hFE = 30-150@ IC= -2.5A ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= -50V(Min) APPLICATIONS ·Designed for use in general-purpose amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC ICM IB PC TJ Tstg PARAMETER Collector

1.15. 2n6106 2n6108 2n6110.pdf Size:121K _inchange_semiconductor

2N610
2N610

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6106 2N6108 2N6110 DESCRIPTION Ў¤ With TO-220 package Ў¤ With short pin APPLICATIONS Ў¤ Power amplifier and switching circuits applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25Ўж )

1.16. 2n6107.pdf Size:188K _inchange_semiconductor

2N610
2N610

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2N6107 DESCRIPTION ·DC Current Gain: hFE = 30-150@ IC= -2A ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= -70V(Min) ·Complement to Type 2N6292 APPLICATIONS ·Designed for use in general-purpose amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC ICM IB PC T

1.17. 2n6098 2n6099 2n6100 2n6101.pdf Size:119K _inchange_semiconductor

2N610
2N610

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6098 2N6099 2N6100 2N6101 DESCRIPTION Ў¤ With TO-220 package Ў¤ High current capability APPLICATIONS Ў¤ For use in general-purpose amplifier and switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector;connected to mounting base Emitter Absolute maximum ratings(Ta=25Ўж ) SYMBOL PARAMETE

1.18. 2n6102 2n6103.pdf Size:57K _inchange_semiconductor

2N610
2N610

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6102 2N6103 DESCRIPTION ·With TO-220 package ·2N6102 type with short pin APPLICATIONS ·For use in general-purpose amplifier and switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIO

1.19. 2n6107 2n6109 2n6111.pdf Size:121K _inchange_semiconductor

2N610
2N610

Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION Ў¤ With TO-220 package Ў¤ Complement to NPN type: 2N6288; 2N6290 ;2N6292 APPLICATIONS Ў¤ Power amplifier and switching circuits applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base 2N6107 2N6109 2N6111 Fig.1 simplified outline (TO-220) and symbol Abs

Otros transistores... 2N3181 , 2N3182 , 2N3183 , 2N3184 , 2N3185 , 2N3186 , 2N3187 , 2N3188 , BC547B , 2N319 , 2N3190 , 2N3191 , 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 .

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