CDD2395 Specs and Replacement

Type Designator: CDD2395

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 2 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 35 pF

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: TO-220

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CDD2395 datasheet

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CDD2395

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL POWER TRANSISTOR CDD2395 (9AW) TO-220 MARKING AS BELOW Designed For Relay drive and DC-DC Converter. ABSOLUTE MAXIMUM RATINGS(Ta=25deg C) DESCRIPTION SYMBOL VALUE UNIT Collector -Base Voltage VCBO 60 V Collector -Emitter Voltage VCEO 50 V Emitter- Base Voltage VEBO 5.0 V... See More ⇒

Detailed specifications: C45C8, CD13003, CD13003D, CD3968, CDB1370, CDB1370EF, CDD1933, CDD2061, A1015, CDL6718, CFA1012, CFA1012O, CFA1012Y, CFB1342, CFB1370, CFB612, CFB810

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