CDD2395 Datasheet, Equivalent, Cross Reference Search
Type Designator: CDD2395
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 2 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 35 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TO-220
CDD2395 Transistor Equivalent Substitute - Cross-Reference Search
CDD2395 Datasheet (PDF)
..1. Size:134K cdil
cdd2395.pdf
cdd2395.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON EPITAXIAL POWER TRANSISTOR CDD2395(9AW)TO-220MARKING : AS BELOWDesigned For Relay drive and DC-DC Converter.ABSOLUTE MAXIMUM RATINGS(Ta=25deg C)DESCRIPTION SYMBOL VALUE UNITCollector -Base Voltage VCBO 60 VCollector -Emitter Voltage VCEO 50 VEmitter- Base Voltage VEBO 5.0 V
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
