2N6100 PDF and Equivalents Search

 

2N6100 PDF Specs and Replacement


   Type Designator: 2N6100
   Material of Transistor: Si
   Polarity: NPN

Absolute Maximum Ratings


   Maximum Collector Power Dissipation (Pc): 75 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 70 V
   Maximum Emitter-Base Voltage |Veb|: 8 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics


   Transition Frequency (ft): 0.8 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO220
 

 2N6100 Substitution

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2N6100 PDF detailed specifications

 ..1. Size:106K  jmnic
2n6098 2n6099 2n6100 2n6101.pdf pdf_icon

2N6100

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6098 2N6099 2N6100 2N6101 DESCRIPTION With TO-220 package APPLICATIONS For use in general-purpose amplifier and switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2N... See More ⇒

 ..2. Size:119K  inchange semiconductor
2n6098 2n6099 2n6100 2n6101.pdf pdf_icon

2N6100

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6098 2N6099 2N6100 2N6101 DESCRIPTION With TO-220 package High current capability APPLICATIONS For use in general-purpose amplifier and switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PA... See More ⇒

 ..3. Size:188K  inchange semiconductor
2n6100.pdf pdf_icon

2N6100

isc Silicon NPN Power Transistor 2N6100 DESCRIPTION DC Current Gain - h = 20-80@ I = 5A FE C Collector-Emitter Sustaining Voltage- V = 70V(Min) CEO(SUS) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general-purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS... See More ⇒

 9.1. Size:149K  motorola
2n6107 2n6111 2n6288 2n6109 2n6292.pdf pdf_icon

2N6100

Order this document MOTOROLA by 2N6107/D SEMICONDUCTOR TECHNICAL DATA 2N6057 thru 2N6059 (See 2N6050) Complementary Silicon Plastic PNP Power Transistors 2N6107 . . . designed for use in general purpose amplifier and switching applications. 2N6109* DC Current Gain Specified to 7.0 Amperes hFE = 30 150 @ IC = 3.0 Adc 2N6111, 2N6288 hFE = 2.3 (Min) @ IC = 7.0 Adc All ... See More ⇒

Detailed specifications: 2N6097 , 2N6098 , 2N6099 , 2N60A , 2N60B , 2N60C , 2N61 , 2N610 , BC547 , 2N6101 , 2N6102 , 2N6103 , 2N6104 , 2N6105 , 2N6106 , 2N6107 , 2N6108 .

History: KTB688 | KSD1616G

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