2N6100 Datasheet. Specs and Replacement
Type Designator: 2N6100 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 75 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 70 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 0.8 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO220
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2N6100 datasheet
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2n6100.pdf
isc Silicon NPN Power Transistor 2N6100 DESCRIPTION DC Current Gain - h = 20-80@ I = 5A FE C Collector-Emitter Sustaining Voltage- V = 70V(Min) CEO(SUS) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general-purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS... See More ⇒
9.1. Size:149K motorola
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9.4. Size:241K onsemi
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9.6. Size:241K onsemi
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9.7. Size:102K onsemi
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9.9. Size:95K cdil
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9.21. Size:121K inchange semiconductor
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isc Silicon NPN Power Transistor 2N6102 DESCRIPTION DC Current Gain - h = 20-80@ I = 5A FE C Collector-Emitter Sustaining Voltage- V = 40V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general-purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR... See More ⇒
Detailed specifications: 2N6097, 2N6098, 2N6099, 2N60A, 2N60B, 2N60C, 2N61, 2N610, BC547, 2N6101, 2N6102, 2N6103, 2N6104, 2N6105, 2N6106, 2N6107, 2N6108
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