CL100B Specs and Replacement
Type Designator: CL100B
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 3 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 100
Package: TO-39
CL100B Substitution
- BJT ⓘ Cross-Reference Search
CL100B datasheet
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN/PNP SILICON PLANAR TRANSISTORS CL100S NPN CK100S PNP TO-39 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector -Emitter Voltage VCEO 50 V Collector -Base Voltage VCBO 60 V Emitter Base Voltage VEBO 5.0 V Collector Current ICM 1.0 A Power Dissipation @ Ta=25 deg C PD 800 mW De... See More ⇒
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR POWER TRANSISTORS CL100, A, B NPN CK100, A, B PNP TO-39 Metal Can Package Medium Power Transistors Suitable for a wide Range of Medium Voltage and Current Amplifier Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITS VCER Collector Emitter Voltage 50 V VCBO Co... See More ⇒
Detailed specifications: CJF44H11, CJF45H11, CJF6107, CJF6388, CJF6668, CK100B, CK100S, CL100A, TIP31, CL100S, CLB764, CLD667, CLD667A, CLD863, CMBA847E, CMBA847F, CMBA847G
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