CLD667A Specs and Replacement
Type Designator: CLD667A
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.9 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 140 MHz
Collector Capacitance (Cc): 12 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Package: TO-92
CLD667A Substitution
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CLD667A datasheet
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS CLD667, CLD667A TO-92 Plastic Package B C E Low Frequency Power Amplifier Complementary CLB647/CLB647A ABSOLUTE MAXIMUM RATINGS (Ta=25 C unless specified otherwise) DESCRIPTION SYMBOL CLD667 CLD667A UNITS VCBO Collector Base Voltage 120 120 V VCEO C... See More ⇒
Detailed specifications: CJF6668, CK100B, CK100S, CL100A, CL100B, CL100S, CLB764, CLD667, 2SC2625, CLD863, CMBA847E, CMBA847F, CMBA847G, CMBA857E, CMBA857F, CMBT200, CMBT200A
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