CMBA847E Datasheet. Specs and Replacement

Type Designator: CMBA847E  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.2 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 200 MHz

Collector Capacitance (Cc): 3.5 pF

Forward Current Transfer Ratio (hFE), MIN: 150

Noise Figure, dB: -

Package: SOT-23

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CMBA847E datasheet

 7.1. Size:129K  cdil

 cmba847.pdf pdf_icon

CMBA847E

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON TRANSISTOR CMBA847 SOT23 PIN CONFIGURATION (NPN) 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector -Base Voltage VCBO 50 V Collector -Emitter Voltage VCEO 50 V Emitter Base Voltage VEB... See More ⇒

 9.1. Size:129K  cdil

 cmba857.pdf pdf_icon

CMBA847E

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP EPITAXIAL PLANAR SILICON TRANSISTOR CMBA857 SOT23 PIN CONFIGURATION (PNP) 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector -Base Voltage VCBO 60 V Collector -Emitter Voltage VCEO 50 V Emitter Base Voltage VEBO... See More ⇒

Detailed specifications: CK100S, CL100A, CL100B, CL100S, CLB764, CLD667, CLD667A, CLD863, 8550, CMBA847F, CMBA847G, CMBA857E, CMBA857F, CMBT200, CMBT200A, CMBT2369, CMBT2484

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