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CMBA847E Specs and Replacement


   Type Designator: CMBA847E
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 200 MHz
   Collector Capacitance (Cc): 3.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 150
   Noise Figure, dB: -
   Package: SOT-23

 CMBA847E Transistor Equivalent Substitute - Cross-Reference Search

   

CMBA847E detailed specifications

 7.1. Size:129K  cdil
 cmba847.pdf pdf_icon

CMBA847E

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON TRANSISTOR CMBA847 SOT23 PIN CONFIGURATION (NPN) 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector -Base Voltage VCBO 50 V Collector -Emitter Voltage VCEO 50 V Emitter Base Voltage VEB... See More ⇒

 9.1. Size:129K  cdil
 cmba857.pdf pdf_icon

CMBA847E

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP EPITAXIAL PLANAR SILICON TRANSISTOR CMBA857 SOT23 PIN CONFIGURATION (PNP) 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector -Base Voltage VCBO 60 V Collector -Emitter Voltage VCEO 50 V Emitter Base Voltage VEBO... See More ⇒

Detailed specifications: CK100S , CL100A , CL100B , CL100S , CLB764 , CLD667 , CLD667A , CLD863 , 8550 , CMBA847F , CMBA847G , CMBA857E , CMBA857F , CMBT200 , CMBT200A , CMBT2369 , CMBT2484 .

History: CS1660

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