CMBT200 Datasheet, Equivalent, Cross Reference Search
Type Designator: CMBT200
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.35 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 250 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SOT-23
CMBT200 Transistor Equivalent Substitute - Cross-Reference Search
CMBT200 Datasheet (PDF)
cmbt200.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP EPITAXIAL PLANAR SILICON TRANSISTOR CMBT200CMBT200APIN CONFIGURATION (PNP)1 = BASESOT232 = EMITTER3 = COLLECTOR3MARKING : AS BELOW12Designed for General Purpose Amplifier Applications.ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise noted)DESCRIPTION SYMBOL VALUE UNIT
cmbt2222a.pdf
CMBT2222ANPN Silicon Planar Epitaxial Transistors Pin configuration:1. BASE2. EMITTER3. COLLECTOR312Unit: inch (mm)Absolute Maximum RatingsSymbol Value UNITCollector-base voltage (open emitter)VCBOmax 75 VCollector-emmitter voltage (open base)VCEO max 40 VEmmitter base voltage (open collector)VEBO max 6.0 VICCollector current (d.c.) max 600 mATotal
cmbt2907.pdf
CMBT2907 PNP Silicon Planar Epitaxial Transistors Pin configuration:1. BASE2. EMITTER3. COLLECTOR312Unit: mmSOT-23 SMD PackageAbsolute Maximum Ratings (Ta = 25 oC unless specified otherwise) SYMBOL CMBT2907 CMBT2907A UNITSDESCRIPTION-VCEOCollector Emitter Voltage 40 60Collector Base Voltage -VCBO 60 60 V-VEBOEmitter Base Voltage 5.0 5.0-IC 600 mACollector
cmbt2222 a.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySOT-23 Formed SMD Package CMBT2222CMBT2222ASILICON PLANAR EPITAXIAL TRANSISTORSNPN silicon transistorsMarkingPACKAGE OUTLINE DETAILSCMBT2222 = lB ALL DIMENSIONS IN mmCMBT2222A = lPPin configuration1 = BASE2 = EMITTER3 = COLLECTOR312ABSOLUTE MAXIMUM RATINGSCMBT2222 C
cmbt2369.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySOT-23 Formed SMD Package CMBT2369SILICON PLANAR EPITAXIAL SWITCHING TRANSISTORNP N transistorMarkingPACKAGE OUTLINE DETAILSCMBT2369 = lJALL DIMENSIONS IN mmPin configuration1 = BASE2 = EMITTER3 = COLLECTOR312ABSOLUTE MAXIMUM RATINGSCollectorbase voltage (open emitter
cmbt2484.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON EPITAXIAL TRANSISTOR CMBT2484SOT23PIN CONFIGURATION (NPN)1 = BASE2 = EMITTER3 = COLLECTOR3MARKING: 1U12LOW NOISE TRANSISTORABSOLUTE MAXIMUM RATINGS (Ta=25 deg C)DESCRIPTION SYMBOL VALUE UNITCollector -Base Voltage VCBO 60 VCollector -Emitter Voltage VCEO 60 VEmi
cmbt2907 a.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySOT-23 Formed SMD Package CMBT2907CMBT2907ASILICON PLANAR EPITAXIAL TRANSISTORSPNP silicon transistorsMarkingPACKAGE OUTLINE DETAILSCMBT2907 = 2B ALL DIMENSIONS IN mmCMBT2907A = 2FPin configuration1 = BASE2 = EMITTER3 = COLLECTOR312ABSOLUTE MAXIMUM RATINGSCMBT2907 C
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
