All Transistors. CMBT6520 Datasheet

 

CMBT6520 Datasheet and Replacement


   Type Designator: CMBT6520
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.225 W
   Maximum Collector-Base Voltage |Vcb|: 350 V
   Maximum Collector-Emitter Voltage |Vce|: 350 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 20 MHz
   Collector Capacitance (Cc): 6 pF
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: SOT-23
 

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CMBT6520 Datasheet (PDF)

 ..1. Size:144K  cdil
 cmbt6520.pdf pdf_icon

CMBT6520

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySOT-23 Formed SMD PackageCMBT 6520HIGHVOLTAGE TRANSISTORPNP transistorMarkingCMBT6520 = 2ZPin configuration1 = BASE2 = EMITTER3 = COLLECTOR312ABSOLUTE MAXIMUM RATINGSCollectorbase voltage (open emitter) VCBO max. 350 VCollectoremitter voltage (open base)

 8.1. Size:144K  cdil
 cmbt6517.pdf pdf_icon

CMBT6520

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySOT-23 Formed SMD PackageCMBT6517HIGHVOLTAGE TRANSISTORNPN transistorMarkingPACKAGE OUTLINE DETAILSCMBT6517 = 1ZALL DIMENSIONS IN mmPin configuration1 = BASE2 = EMITTER3 = COLLECTOR312ABSOLUTE MAXIMUM RATINGSCollectorbase voltage (open emitter) VCBO max. 35

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