CN650 Specs and Replacement
Type Designator: CN650
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1.1 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 140 MHz
Collector Capacitance (Cc): 30 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Package: TO-92
CN650 Substitution
- BJT ⓘ Cross-Reference Search
CN650 datasheet
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS CN650 / CN651 TO-92 Plastic Package C B E Complementary CP750 and CP751 Use in Wide Variety of Industrial and Consumer Applications Including Lamp and Solenoid Drivers and Audio Amplifier ABSOLUTE MAXIMUM RATINGS (Ta=25 C ) DESCRIPTION SYMBOL CN650 CN... See More ⇒
Detailed specifications: CN304, CN450, CN451, CN452, CN453, CN454, CN455, CN649, 2SC4793, CN651, CN652, CN653, CN654, CN655, CN656, CN657, CN8050
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