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CN8050D Specs and Replacement


   Type Designator: CN8050D
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.625 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 20 pF
   Forward Current Transfer Ratio (hFE), MIN: 160
   Noise Figure, dB: -
   Package: TO-92

 CN8050D Transistor Equivalent Substitute - Cross-Reference Search

   

CN8050D detailed specifications

 8.1. Size:227K  cdil
 cn8050 cn8550 c d.pdf pdf_icon

CN8050D

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL TRANSISTORS CN8050 NPN CN8550 PNP TO-92 Plastic Package C B E ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITS VCEO Collector Emitter Voltage 25 V VCBO Collector Base Voltage 40 V VEBO Emitter Base Voltage 6.0 V IC Collector Current 800 mA ICM Peak Colle... See More ⇒

Detailed specifications: CN652 , CN653 , CN654 , CN655 , CN656 , CN657 , CN8050 , CN8050C , 8050 , CN8550 , CN8550C , CN8550D , CNL635 , CNL637 , CNL639 , CO38P , CP107 .

Keywords - CN8050D transistor specs

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