CN8550D Specs and Replacement
Type Designator: CN8550D
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.8 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 35 pF
Forward Current Transfer Ratio (hFE), MIN: 160
Package: TO-92
CN8550D Substitution
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CN8550D datasheet
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL TRANSISTORS CN8050 NPN CN8550 PNP TO-92 Plastic Package C B E ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITS VCEO Collector Emitter Voltage 25 V VCBO Collector Base Voltage 40 V VEBO Emitter Base Voltage 6.0 V IC Collector Current 800 mA ICM Peak Colle... See More ⇒
Detailed specifications: CN655, CN656, CN657, CN8050, CN8050C, CN8050D, CN8550, CN8550C, TIP127, CNL635, CNL637, CNL639, CO38P, CP107, CP1342, CP4, CP500
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