All Transistors. CNL635 Datasheet

 

CNL635 Datasheet, Equivalent, Cross Reference Search


   Type Designator: CNL635
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.8 W
   Maximum Collector-Base Voltage |Vcb|: 45 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 200 MHz
   Collector Capacitance (Cc): 7 pF
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO-92

 CNL635 Transistor Equivalent Substitute - Cross-Reference Search

   

CNL635 Datasheet (PDF)

 ..1. Size:346K  cdil
 cnl635 cpl636 cnl637 cpl638 cnl639 cpl640.pdf

CNL635 CNL635

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySILICON PLANAR EPITAXIAL TRANSISTORS CNL635 CPL636CNL637 CPL638CNL639 CPL640NPN PNPTO-92Plastic PackageECBSuitable for Driver Stage of Audio AmplifierABSOLUTE MAXIMUM RATINGS (Ta=25C Unless Otherwise Specified)CNL635 CNL637 CNL639DESCRIPTION SYMBOL UNITCPL636 CPL638 CPL640Col

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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