CNL635 Specs and Replacement
Type Designator: CNL635
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.8 W
Maximum Collector-Base Voltage |Vcb|: 45 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 7 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO-92
CNL635 Substitution
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CNL635 datasheet
cnl635 cpl636 cnl637 cpl638 cnl639 cpl640.pdf 
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL TRANSISTORS CNL635 CPL636 CNL637 CPL638 CNL639 CPL640 NPN PNP TO-92 Plastic Package E CB Suitable for Driver Stage of Audio Amplifier ABSOLUTE MAXIMUM RATINGS (Ta=25 C Unless Otherwise Specified) CNL635 CNL637 CNL639 DESCRIPTION SYMBOL UNIT CPL636 CPL638 CPL640 Col... See More ⇒
Detailed specifications: CN656, CN657, CN8050, CN8050C, CN8050D, CN8550, CN8550C, CN8550D, 2SD313, CNL637, CNL639, CO38P, CP107, CP1342, CP4, CP500, CP501
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