CSB1116G Datasheet, Equivalent, Cross Reference Search
Type Designator: CSB1116G
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.75 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 70 MHz
Collector Capacitance (Cc): 25 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: TO-92
CSB1116G Transistor Equivalent Substitute - Cross-Reference Search
CSB1116G Datasheet (PDF)
csb1116.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP EPITAXIAL PLANAR SILICON TRANSISTOR CSB1116CSB1116ATO-92BCEBCEAudio Frequency Power Amplifier And Medium Speed SwitchingComplementary CSD1616/1616AABSOLUTE MAXIMUM RATINGS(Ta=25 deg C)DESCRIPTION SYMBOL CSB1116 CSB1116A UNITCollector -Base Voltage VCBO 60 80 VCollector -Emitt
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .