All Transistors. CSB1370D Datasheet

 

CSB1370D Datasheet and Replacement


   Type Designator: CSB1370D
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 15 MHz
   Collector Capacitance (Cc): 80 pF
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: TO-220
 

 CSB1370D Substitution

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CSB1370D Datasheet (PDF)

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CSB1370D

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP SILICON EPITAXIAL POWER TRANSISTOR CSB1370(9AW)TO-220MARKING : AS BELOWDesigned For AF Power Amplifier.ABSOLUTE MAXIMUM RATINGS(Ta=25deg C)DESCRIPTION SYMBOL VALUE UNITCollector -Base Voltage VCBO 60 VCollector -Emitter Voltage VCEO 60 VEmitter- Base Voltage VEBO 5.0 VCollector C

Datasheet: CSB1116G , CSB1116L , CSB1116Y , CSB1181 , CSB1182 , CSB1184 , CSB1272 , CSB1370 , 2N3904 , CSB1370E , CSB1370F , CSB1412 , CSB1426 , CSB1426P , CSB1426Q , CSB1426R , CSB1436 .

History: 2SC989 | 2N1658A-13 | 2SD799 | 2N4086 | PN930

Keywords - CSB1370D transistor datasheet

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