CSB1370E Specs and Replacement

Type Designator: CSB1370E

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 30 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 15 MHz

Collector Capacitance (Cc): 80 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: TO-220

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CSB1370E datasheet

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CSB1370E

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON EPITAXIAL POWER TRANSISTOR CSB1370 (9AW) TO-220 MARKING AS BELOW Designed For AF Power Amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25deg C) DESCRIPTION SYMBOL VALUE UNIT Collector -Base Voltage VCBO 60 V Collector -Emitter Voltage VCEO 60 V Emitter- Base Voltage VEBO 5.0 V Collector C... See More ⇒

Detailed specifications: CSB1116L, CSB1116Y, CSB1181, CSB1182, CSB1184, CSB1272, CSB1370, CSB1370D, TIP41, CSB1370F, CSB1412, CSB1426, CSB1426P, CSB1426Q, CSB1426R, CSB1436, CSB1436P

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