All Transistors. CSB1370E Datasheet

 

CSB1370E Datasheet, Equivalent, Cross Reference Search


   Type Designator: CSB1370E
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 15 MHz
   Collector Capacitance (Cc): 80 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: TO-220

 CSB1370E Transistor Equivalent Substitute - Cross-Reference Search

   

CSB1370E Datasheet (PDF)

 7.1. Size:113K  cdil
 csb1370.pdf

CSB1370E CSB1370E

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP SILICON EPITAXIAL POWER TRANSISTOR CSB1370(9AW)TO-220MARKING : AS BELOWDesigned For AF Power Amplifier.ABSOLUTE MAXIMUM RATINGS(Ta=25deg C)DESCRIPTION SYMBOL VALUE UNITCollector -Base Voltage VCBO 60 VCollector -Emitter Voltage VCEO 60 VEmitter- Base Voltage VEBO 5.0 VCollector C

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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