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CSB649D PDF Specs and Replacement


   Type Designator: CSB649D
   Material of Transistor: Si
   Polarity: PNP

Absolute Maximum Ratings


   Maximum Collector Power Dissipation (Pc): 20 W
   Maximum Collector-Base Voltage |Vcb|: 180 V
   Maximum Collector-Emitter Voltage |Vce|: 120 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics


   Transition Frequency (ft): 140 MHz
   Collector Capacitance (Cc): 27 pF
   Forward Current Transfer Ratio (hFE), MIN: 160
   Noise Figure, dB: -
   Package: TO-126
 

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CSB649D PDF detailed specifications

 8.1. Size:87K  cdil
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CSB649D

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-126 (SOT-32) Plastic Package CSB649, CSB649A CSD669, CSD669A CSB649, 649A PNP PLASTIC POWER TRANSISTORS CSD669, 669A NPN PLASTIC POWER TRANSISTORS Low frequency Power Amplifier PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 ALL DIMENSIONS IN MM ABSOLUTE MAXIMUM RATINGS ABSOLUTE... See More ⇒

Detailed specifications: CSB631KE , CSB631KF , CSB649 , CSB649A , CSB649AB , CSB649AC , CSB649B , CSB649C , 8550 , CSD669 , CSD669A , CSD669AB , CSD669AC , CSD669B , CSD669C , CSD669D , CSB737 .

History: ECG163A

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