All Transistors. CSB649D Datasheet

 

CSB649D Datasheet and Replacement


   Type Designator: CSB649D
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 20 W
   Maximum Collector-Base Voltage |Vcb|: 180 V
   Maximum Collector-Emitter Voltage |Vce|: 120 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 140 MHz
   Collector Capacitance (Cc): 27 pF
   Forward Current Transfer Ratio (hFE), MIN: 160
   Noise Figure, dB: -
   Package: TO-126
 

 CSB649D Substitution

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CSB649D Datasheet (PDF)

 8.1. Size:87K  cdil
 csb649 a csd669-a.pdf pdf_icon

CSB649D

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyTO-126 (SOT-32) Plastic Package CSB649, CSB649ACSD669, CSD669ACSB649, 649A PNP PLASTIC POWER TRANSISTORSCSD669, 669A NPN PLASTIC POWER TRANSISTORSLow frequency Power AmplifierPIN CONFIGURATION1. EMITTER2. COLLECTOR3. BASE123ALL DIMENSIONS IN MMABSOLUTE MAXIMUM RATINGSABSOLUTE

Datasheet: CSB631KE , CSB631KF , CSB649 , CSB649A , CSB649AB , CSB649AC , CSB649B , CSB649C , D209L , CSD669 , CSD669A , CSD669AB , CSD669AC , CSD669B , CSD669C , CSD669D , CSB737 .

Keywords - CSB649D transistor datasheet

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