CSB649D Datasheet. Specs and Replacement

Type Designator: CSB649D  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 20 W

Maximum Collector-Base Voltage |Vcb|: 180 V

Maximum Collector-Emitter Voltage |Vce|: 120 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 140 MHz

Collector Capacitance (Cc): 27 pF

Forward Current Transfer Ratio (hFE), MIN: 160

Noise Figure, dB: -

Package: TO-126

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CSB649D datasheet

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CSB649D

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-126 (SOT-32) Plastic Package CSB649, CSB649A CSD669, CSD669A CSB649, 649A PNP PLASTIC POWER TRANSISTORS CSD669, 669A NPN PLASTIC POWER TRANSISTORS Low frequency Power Amplifier PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 ALL DIMENSIONS IN MM ABSOLUTE MAXIMUM RATINGS ABSOLUTE... See More ⇒

Detailed specifications: CSB631KE, CSB631KF, CSB649, CSB649A, CSB649AB, CSB649AC, CSB649B, CSB649C, 8550, CSD669, CSD669A, CSD669AB, CSD669AC, CSD669B, CSD669C, CSD669D, CSB737

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