CSC3329GR Specs and Replacement

Type Designator: CSC3329GR

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.4 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 125 °C

Electrical Characteristics

Transition Frequency (ft): 80 MHz

Collector Capacitance (Cc): 6.2 pF

Forward Current Transfer Ratio (hFE), MIN: 200

Noise Figure, dB: -

Package: TO-92

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CSC3329GR datasheet

 7.1. Size:378K  cdil

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CSC3329GR

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR CSC3329 TO-92 Plastic Package Complementary CSA1316 ABSOLUTE MAXIMUM RATINGS (Ta=25 C unless specified otherwise) DESCRIPTION SYMBOL VALUE UNITS VCEO Collector Emitter Voltage 80 V VCBO Collector Base Voltage 80 V VEBO Emitter Base Voltage 5 V IC Col... See More ⇒

Detailed specifications: CSC3199BL, CSC3199GR, CSC3199O, CSC3199Y, CSC3255, CSC3255S, CSC3329, CSC3329BL, S9014, CSC3331, CSC3331R, CSC3331S, CSC3331T, CSC3331TU, CSC3331U, CSC3331V, CSC3420

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