All Transistors. CSC3329GR Datasheet

 

CSC3329GR Datasheet and Replacement


   Type Designator: CSC3329GR
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.4 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 80 MHz
   Collector Capacitance (Cc): 6.2 pF
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: TO-92
 

 CSC3329GR Substitution

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CSC3329GR Datasheet (PDF)

 7.1. Size:378K  cdil
 csc3329 csa1316.pdf pdf_icon

CSC3329GR

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL TRANSISTOR CSC3329TO-92Plastic PackageComplementary CSA1316ABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL VALUE UNITSVCEOCollector Emitter Voltage 80 VVCBOCollector Base Voltage 80 VVEBOEmitter Base Voltage 5 VICCol

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SC4793 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: BC182LB

Keywords - CSC3329GR transistor datasheet

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