2N619 Datasheet. Specs and Replacement
Type Designator: 2N619 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.25 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 35 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 120 °C
Electrical Characteristics
Transition Frequency (ft): 1 MHz
Collector Capacitance (Cc): 82 pF
Forward Current Transfer Ratio (hFE), MIN: 14
Package: TO5
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2N619 datasheet
2n6190 2n6191 2n6192 2n6193.pdf ![]()
145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824 ... See More ⇒
2N6193LCC4 MECHANICAL DATA Dimensions in mm (inches) PNP SILICON TRANSISTORS 9.14 (0.360) 1.27 (0.050) 8.64 (0.340) 1.07 (0.040) 2.16 (0.085) 12 13 14 15 16 1.39 (0.055) 1.02 (0.040) 11 17 10 18 7.62 (0.300) 7.12 (0.280) 9 1 0.76 (0.030) FEATURES 8 2 0.51 (0.020) Hermetically sealed ceramic surface 0.33 (0.013) Rad. 0.08 (0.003) 7 6 5 4 3 mount package 0.43 (0... See More ⇒
2N6193ALCC4 MECHANICAL DATA Dimensions in mm (inches) PNP SILICON TRANSISTORS 9.14 (0.360) 1.27 (0.050) 8.64 (0.340) 1.07 (0.040) 2.16 (0.085) 12 13 14 15 16 1.39 (0.055) 1.02 (0.040) 11 17 10 18 7.62 (0.300) 7.12 (0.280) 9 1 0.76 (0.030) FEATURES 8 2 0.51 (0.020) Hermetically sealed ceramic surface 0.33 (0.013) Rad. 0.08 (0.003) 7 6 5 4 3 mount package 0.43 (... See More ⇒
2N6199 NPN SILICON RF POWER TRANSISTOR DESCRIPTION PACKAGE STYLE .380" 4L STUD The ASI 2N6199 is Designed for VHF .112x45 A Class C Power Amplifier Applications C up to 250 MHz. B E E FEATURES C B PG = 10 dB Typical at 25 W/175 MHz I Load VSWR at Rated Conditions D H J Omnigold Metallization System G #8-32 UNC-2A F E MA... See More ⇒
Detailed specifications: 2N6182, 2N6183, 2N6184, 2N6185, 2N6186, 2N6187, 2N6188, 2N6189, 2SC2625, 2N6190, 2N6191, 2N6192, 2N6193, 2N6193A, 2N6194, 2N6195, 2N6196
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