All Transistors. CSD401G Datasheet

 

CSD401G Datasheet and Replacement


   Type Designator: CSD401G
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 25 W
   Maximum Collector-Base Voltage |Vcb|: 200 V
   Maximum Collector-Emitter Voltage |Vce|: 150 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 5 MHz
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: TO-220
 

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CSD401G Datasheet (PDF)

 8.1. Size:376K  cdil
 csd401.pdf pdf_icon

CSD401G

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyTO-220 Plastic Package CSD401CSD401 NPN PLASTIC POWER TRANSISTORComplementary CSB546TV Vertical Deflection Output ApplicationsPIN CONFIGURATION41. BASE2. COLLECTOR3. EMITTER4. COLLECTOR123CDIM MIN. MAX.B EFA 14.42 16.51B 9.63 10.67C 3.56 4.83D0.90E 1.15 1.401

 9.1. Size:825K  1
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CSD401G

CSD40N70 N-Channel Trench Power MOSFET General Description The CSD40N70 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a wide variety of applications. Schematic Diagram Features VDS = 40V,ID =60A R

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , TIP42C , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: 2SC2032 | 2SA509Y

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