All Transistors. CSD655D Datasheet

 

CSD655D Datasheet and Replacement


   Type Designator: CSD655D
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.5 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 15 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.7 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 250 MHz
   Collector Capacitance (Cc): 30 pF
   Forward Current Transfer Ratio (hFE), MIN: 250
   Noise Figure, dB: -
   Package: TO-92
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CSD655D Datasheet (PDF)

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CSD655D

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN EPITAXIAL PLANAR SILICON TRANSISTOR CSD655(9AW)TO-92BCEMarking : As BelowABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)DESCRIPTION SYMBOL VALUE UNITCollector -Base Voltage VCBO 30 VCollector -Emitter Voltage VCEO 15 VEmitter Base Voltage VEBO 5.0 VCollector Curre

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

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