CSD655D Datasheet. Specs and Replacement

Type Designator: CSD655D  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.5 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 15 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.7 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 250 MHz

Collector Capacitance (Cc): 30 pF

Forward Current Transfer Ratio (hFE), MIN: 250

Noise Figure, dB: -

Package: TO-92

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CSD655D datasheet

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CSD655D

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON TRANSISTOR CSD655 (9AW) TO-92 BCE Marking As Below ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified) DESCRIPTION SYMBOL VALUE UNIT Collector -Base Voltage VCBO 30 V Collector -Emitter Voltage VCEO 15 V Emitter Base Voltage VEBO 5.0 V Collector Curre... See More ⇒

Detailed specifications: CSD600E, CSD600F, CSD600K, CSD600KD, CSD600KE, CSD600KF, CSD611, CSD655, A1941, CSD655E, CSD655F, CSD786, CSD786Q, CSD786R, CSD786S, CSD794, CSD794A

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