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CSD655E PDF Specs and Replacement


   Type Designator: CSD655E
   Material of Transistor: Si
   Polarity: NPN

Absolute Maximum Ratings


   Maximum Collector Power Dissipation (Pc): 0.5 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 15 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.7 A
   Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics


   Transition Frequency (ft): 250 MHz
   Collector Capacitance (Cc): 30 pF
   Forward Current Transfer Ratio (hFE), MIN: 300
   Noise Figure, dB: -
   Package: TO-92
 

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CSD655E PDF detailed specifications

 8.1. Size:86K  cdil
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CSD655E

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON TRANSISTOR CSD655 (9AW) TO-92 BCE Marking As Below ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified) DESCRIPTION SYMBOL VALUE UNIT Collector -Base Voltage VCBO 30 V Collector -Emitter Voltage VCEO 15 V Emitter Base Voltage VEBO 5.0 V Collector Curre... See More ⇒

Detailed specifications: CSD600F , CSD600K , CSD600KD , CSD600KE , CSD600KF , CSD611 , CSD655 , CSD655D , TIP31C , CSD655F , CSD786 , CSD786Q , CSD786R , CSD786S , CSD794 , CSD794A , CSD794AO .

History: UN5112

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