PN100 Specs and Replacement
Type Designator: PN100
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 35 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO-92
PN100 Substitution
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PN100 datasheet
pn100 pn100a mmbt100 mmbt100a.pdf 
October 2008 PN100/PN100A/MMBT100/MMBT100A NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300mA. Sourced from process 10. C E TO-92 SOT-23 B 1 1. Emitter 2. Base 3. Collector Mark PN100/PN100A Absolute Maximum Ratings* Ta = 25 C unless otherwise noted Symbol Parameter Ratings Units VCEO Collector... See More ⇒
pn100 pn100a mmbt100 mmbt100a.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS PN200 PN200A TO-92 Plastic Package C B E COMPLEMENTARY PN100, PN100A ABSOLUTE MAXIMUM RATINGS (Ta=25 C unless specified otherwise) DESCRIPTION SYMBOL VALUE UNITS VCEO Collector Emitter Voltage 35 V VCBO Collector Base Voltage 60 V VEBO Emitter ... See More ⇒
Detailed specifications: CSL13003 , CTU83 , CVL639 , CVL640 , MZT3055 , P2N2369 , P2N2369A , P2N2907A , 2SB817 , PN200 , 2CF2325 , SL100 , 2N23867 , 2N3055HV , 2N6371HV , A1941 , BD237S .
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