2N6371HV Datasheet. Specs and Replacement

Type Designator: 2N6371HV  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 90 W

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Collector Current |Ic max|: 15 A

Electrical Characteristics

Transition Frequency (ft): 2.5 MHz

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: TO-3

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2N6371HV datasheet

 8.1. Size:202K  comset

2n6253-2n6254-2n6371.pdf pdf_icon

2N6371HV

2N6253 - 2N6254 - 2N6371 HIGH POWER SILICON NPN TRANSISTORS The 2N6253, 2N6254, and 2N6371 are silicon NPN transistors intended for a wide variety of high-power applications. The construction of these devices renders them highly resistant to second breakdown over a wide range of operating conditions. These devices differ in maximum ratings for voltage and power dissipation. All are suppli... See More ⇒

 8.2. Size:148K  jmnic

2n6371.pdf pdf_icon

2N6371HV

JMnic Product Specification Silicon NPN Power Transistors 2N6371 DESCRIPTION With TO-3 package Low collector saturation voltage High dissipation capability Excellent safe operating area APPLICATIONS Series and shunt regulators High-fidelity amplifiers Power-switching circuits PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and s... See More ⇒

 8.3. Size:116K  inchange semiconductor

2n6371.pdf pdf_icon

2N6371HV

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6371 DESCRIPTION With TO-3 package Low collector saturation voltage High dissipation capability Excellent safe operating area APPLICATIONS Series and shunt regulators High-fidelity amplifiers Power-switching circuits PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified out... See More ⇒

Detailed specifications: P2N2369A, P2N2907A, PN100, PN200, 2CF2325, SL100, 2N23867, 2N3055HV, 2SA1015, A1941, BD237S, BD675BPL, BF422BPL, BU908F, BUF508A, BUX84A, C5198

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