2N6371HV Datasheet and Replacement
Type Designator: 2N6371HV
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 90 W
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Collector Current |Ic max|: 15 A
Transition Frequency (ft): 2.5 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO-3
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2N6371HV Datasheet (PDF)
2n6253-2n6254-2n6371.pdf

2N6253 - 2N6254 - 2N6371HIGH POWER SILICON NPN TRANSISTORSThe 2N6253, 2N6254, and 2N6371 are silicon NPN transistors intended for a widevariety of high-power applications. The construction of these devices renders themhighly resistant to second breakdown over a wide range of operating conditions.These devices differ in maximum ratings for voltage and power dissipation. All aresuppli
2n6371.pdf

JMnic Product Specification Silicon NPN Power Transistors 2N6371 DESCRIPTION With TO-3 package Low collector saturation voltage High dissipation capability Excellent safe operating area APPLICATIONS Series and shunt regulators High-fidelity amplifiers Power-switching circuits PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and s
2n6371.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6371 DESCRIPTION With TO-3 package Low collector saturation voltage High dissipation capability Excellent safe operating area APPLICATIONS Series and shunt regulators High-fidelity amplifiers Power-switching circuits PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified out
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: KT6109D | RT1P430M | D44VH | 2SC3460K | 2SC4439 | 2SD1101 | HSE410
Keywords - 2N6371HV transistor datasheet
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History: KT6109D | RT1P430M | D44VH | 2SC3460K | 2SC4439 | 2SD1101 | HSE410



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