CJD175 Datasheet. Specs and Replacement

Type Designator: CJD175

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 30 W

Maximum Collector-Base Voltage |Vcb|: 45 V

Maximum Collector-Emitter Voltage |Vce|: 45 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 3 MHz

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO-252 DPAK

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CJD175 datasheet

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CJD175

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company CJD176 EPITAXIAL SILICON POWER TRANSISTORS CJD175 CJD178 CJD177 CJD180 CJD179 NPN PNP DPAK (TO-252) Plastic Package Intended for use in Medium Power Linear Switching Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL CJD175 CJD177 CJD179 UNIT CJD176 CJD178 CJD180 Collector -Emitter V... See More ⇒

Detailed specifications: CFD2374AQ, CFD2374P, CFD2374Q, CFD2375, CFD2375P, CFD2375Q, CJD110, CJD115, A733, CJD176, CJD177, CJD178, CJD179, CJD180, CJD204R, CJD3439, CJD81

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