CJF101 Specs and Replacement
Type Designator: CJF101
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 80 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Collector Capacitance (Cc): 200 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: TO-220FP
CJF101 Transistor Equivalent Substitute - Cross-Reference Search
CJF101 detailed specifications
cjf100 7.pdf
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR POWER DARLINGTON TRANSISTORS NPN PNP CJF100 CJF105 CJF101 CJF106 CJF102 CJF107 TO-220FP Full y Isolated Plastic Package Power Darlington for Linear and Switching Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL CJF100 CJF101 CJF102 UNIT CJF105 CJF106 CJF107 VCBO Collec... See More ⇒
Detailed specifications: CJD179 , CJD180 , CJD204R , CJD3439 , CJD81 , CJD86 , CJE13007 , CJF100 , 8050 , CJF102 , CJF105 , CJF106 , CJF107 , CMBTA42 , CMBTA44 , CMBTA92 , CN1016 .
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