CSB1086N Datasheet. Specs and Replacement

Type Designator: CSB1086N  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 10 W

Maximum Collector-Emitter Voltage |Vce|: 120 V

Maximum Collector Current |Ic max|: 1.5 A

Electrical Characteristics

Transition Frequency (ft): 30 MHz

Forward Current Transfer Ratio (hFE), MIN: 56

Noise Figure, dB: -

Package: TO-126

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CSB1086N datasheet

 9.1. Size:229K  cdil

 csb1065.pdf pdf_icon

CSB1086N

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP PLASTIC POWER TRANSISTOR CSB1065 TO126 Plastic Package E C B Complementary CSD1506 Low Frequency Power Amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25 C unless specified otherwise) DESCRIPTION SYMBOL VALUE UNIT VCBO Collector Base Voltage(open emitter) >60 V Collector Emitter Voltage (open b... See More ⇒

 9.2. Size:235K  cdil

 csb1058.pdf pdf_icon

CSB1086N

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP EPITAXIAL PLANAR SILICON TRANSISTOR CSB1058 TO-92 BCE B C E Low Frequency Power Amplifier. Complementary CSD1489 ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified) DESCRIPTION SYMBOL VALUE UNIT Collector -Base Voltage BVCBO 20 V Collector Emitter Voltage BVCEO 16 V Emitter B... See More ⇒

Detailed specifications: CSB1065Q, CSB1065R, CSB1086, CSB1086A, CSB1086AN, CSB1086AP, CSB1086AQ, CSB1086B, TIP122, CSB1086P, CSB1086Q, CSB1086R, CSB507, CSB507C, CSB507D, CSB507E, CSB507F

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