CSB1086R Specs and Replacement
Type Designator: CSB1086R
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Collector Current |Ic max|: 1.5 A
Transition Frequency (ft): 30 MHz
Forward Current Transfer Ratio (hFE), MIN: 180
Noise Figure, dB: -
Package: TO-126
CSB1086R Transistor Equivalent Substitute - Cross-Reference Search
CSB1086R detailed specifications
csb1065.pdf
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP PLASTIC POWER TRANSISTOR CSB1065 TO126 Plastic Package E C B Complementary CSD1506 Low Frequency Power Amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25 C unless specified otherwise) DESCRIPTION SYMBOL VALUE UNIT VCBO Collector Base Voltage(open emitter) >60 V Collector Emitter Voltage (open b... See More ⇒
csb1058.pdf
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP EPITAXIAL PLANAR SILICON TRANSISTOR CSB1058 TO-92 BCE B C E Low Frequency Power Amplifier. Complementary CSD1489 ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified) DESCRIPTION SYMBOL VALUE UNIT Collector -Base Voltage BVCBO 20 V Collector Emitter Voltage BVCEO 16 V Emitter B... See More ⇒
Detailed specifications: CSB1086A , CSB1086AN , CSB1086AP , CSB1086AQ , CSB1086B , CSB1086N , CSB1086P , CSB1086Q , BD140 , CSB507 , CSB507C , CSB507D , CSB507E , CSB507F , CSB624 , CSB817F , CSB817OF .
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