CSB507D Datasheet, Equivalent, Cross Reference Search
Type Designator: CSB507D
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 8 MHz
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TO-220
CSB507D Transistor Equivalent Substitute - Cross-Reference Search
CSB507D Datasheet (PDF)
csb507 csd313.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyTO-220 Plastic Package CSB507, CSD313CSB507 PNP PLASTIC POWER TRANSISTORCSD313 NPN PLASTIC POWER TRANSISTORLow frequency Power Amplifier ApplicationsPIN CONFIGURATION41. BASE2. COLLECTOR3. EMITTER4. COLLECTOR123CDIM MIN. MAX.EBFA 14.42 16.51B 9.63 10.67C 3.56 4.83
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .