CSB507F Specs and Replacement

Type Designator: CSB507F

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 30 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 8 MHz

Forward Current Transfer Ratio (hFE), MIN: 160

Noise Figure, dB: -

Package: TO-220

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CSB507F datasheet

 8.1. Size:240K  cdil

 csb507 csd313.pdf pdf_icon

CSB507F

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package CSB507, CSD313 CSB507 PNP PLASTIC POWER TRANSISTOR CSD313 NPN PLASTIC POWER TRANSISTOR Low frequency Power Amplifier Applications PIN CONFIGURATION 4 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 1 2 3 C DIM MIN. MAX. E B F A 14.42 16.51 B 9.63 10.67 C 3.56 4.83... See More ⇒

Detailed specifications: CSB1086N, CSB1086P, CSB1086Q, CSB1086R, CSB507, CSB507C, CSB507D, CSB507E, 13009, CSB624, CSB817F, CSB817OF, CSB817YF, CSB834, CSB834O, CSB834Y, CSB856

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