CSB858 Specs and Replacement
Type Designator: CSB858
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 70 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 15 MHz
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TO-220
CSB858 Transistor Equivalent Substitute - Cross-Reference Search
CSB858 detailed specifications
csb857 csb858 csd1133 34.pdf
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package CSB857, CSB858 CSD1133, CSD1134 CSB857, 858 PNP PLASTIC POWER TRANSISTORS CSD1133, 1134 NPN PLASTIC POWER TRANSISTORS Low frequency Power Amplifier PIN CONFIGURATION 4 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 1 2 3 C DIM MIN. MAX. B E F A 14.42 16.51 B 9.63 ... See More ⇒
csb856.pdf
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP PLASTIC POWER TRANSISTOR CSB856 TO-220 Plastic Package LOW FREQUENCY POWER AMPLIFIER ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT VCEO Collector -Emitter Voltage 50 V VCBO Collector -Base Voltage 50 V VEBO Emitter Base Voltage 4.0 V IC Collector Current Continuous 3.0 A PD P... See More ⇒
Detailed specifications: CSB856 , CSB856A , CSB856B , CSB856C , CSB857 , CSB857B , CSB857C , CSB857D , BD335 , CSB858B , CSB858C , CSB858D , CSC1008 , CSC1008G , CSC1008O , CSC1008R , CSC1008Y .
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