CSD545E Specs and Replacement
Type Designator: CSD545E
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.6 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 180 MHz
Collector Capacitance (Cc): 15 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Package: TO-92
CSD545E Substitution
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CSD545E datasheet
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL TRANSISTOR CSD545 TO-92 Plastic Package Low Frequencty Power Amplifier And Convertor Stage Applications. ABSOLUTE MAXIMUM RATINGS (Ta=25 C unless specified otherwise) DESCRIPTION SYMBOL VALUE UNIT Collector Emitter Voltage BVCEO 25 V Collector Base Voltage BVCBO 25 V Emitt... See More ⇒
Detailed specifications: CSD1616G, CSD1616L, CSD1616Y, CSD1638, CSD1833, CSD2495, CSD545, CSD545D, 8550, CSD545F, CSD545G, CSL13002, MZT122, MZT127, MZT2955, TIP122F, TIP127F
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